1N4449HG datasheet, PDF - EEWORLD Datasheet

1N4449HG: DescriptionRectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size176KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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1N4449HG Overview

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon

Parameter Name	Attribute value
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	2 A
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output current	0.15 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.004 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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