Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
ORDERING INFORMATION
Device
BSS123LT1G
BSS123LT3G
BVSS123LT1G*
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.6
1.4
I
D
, DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
3V
T
J
= 25°C
8V
V
GS
= 10 V
6V
5V
4V
I
D
, DRAIN CURRENT (A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0
1
T
J
= 25°C
V
DS
= 10 V
T
J
= 150°C
2
3
T
J
=
−55°C
4
5
6
9
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
3.50
T
J
= 25°C
C, CAPACITANCE (pF)
3.25
3.00
2.75
2.50
2.25
V
GS
= 4.5 V
40
30
20
10
0
C
rss
0
10
50
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 0
C
iss
C
oss
V
GS
= 10 V
80
100
120
140
160
180
200
20
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (mA)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
Q
T
8
6
4
2
0
Q
GS
Q
GD
T
J
= 25°C
V
GS
= 10 V
V
DS
= 30 V
I
D
= 0.2 A
3
4
5
6
7
8
I
S
, SOURCE CURRENT (A)
0.1
1
Figure 4. Capacitance Variation
V
GS
= 0 V
0.01
0.001
T
J
= 125°C
T
J
= 25°C
0.4
0.6
T
J
=
−55°C
0.8
1.0
1.2
0
1
2
0.0001
0
0.2
Q
G
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 5. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 6. Diode Forward Voltage vs. Current
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3
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1
I
D
, DRAIN CURRENT (A)
0 V
≤
V
GS
≤
20 V
SINGLE PULSE
T
A
= 25°C
T
J
= 150°C
100
ms
1 ms
10 ms
100 ms
0.1
0.01
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
dc
100
1000
0.001
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
1000
D = 0.5
100
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
1 oz. Cu Pad, 5mm thick, 25mm
2
area
10
100
1000
10
0.1
0.000001
Figure 8. Thermal Response
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4
BSS123LT1G, BVSS123LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
D
SEE VIEW C
3
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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