BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
CW
GSM EDGE
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
f
(MHz)
1930 to 1990
1930 to 1990
V
DS
P
L(AV)
G
p
(V)
28
28
(W)
63
29.5
19
19
D
52
ACPR
400k
(dBc)
-
ACPR
600k
(dBc)
-
73
EVM
rms
(%)
-
1.7
(dB) (%)
37.5
61.5
1.2 Features
Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an I
Dq
of 550 mA:
Average output power = 29.5 W
Gain = 19 dB
Efficiency = 37.5 %
ACPR
400k
=
61.5
dBc
ACPR
600k
=
73
dBc
EVM
rms
= 1.7 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G20-75 (SOT502A)
1
3
2
2
3
sym112
1
BLF6G20LS-75 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G20-75
BLF6G20LS-75
-
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
18
+150
225
Unit
V
V
A
C
C
BLF6G20-75_BLF6G20LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 13
BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Conditions
Type
BLF6G20-75
BLF6G20LS-75
Typ Unit
0.9
K/W
0.75 K/W
Symbol Parameter
R
th(j-case)
thermal resistance from T
case
= 80
C;
junction to case
P
L
= 29.5 W (CW)
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 100 mA
V
DS
= 28 V; I
D
= 600 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5 A
Min Typ Max
65
1.4
1.6
-
-
2
2.1
-
-
2.4
2.6
3
Unit
V
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.5 mA
14.9 18.5 -
-
-
-
-
-
7
300
-
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.5 A
feedback capacitance
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
0.15 0.235
1.6
-
pF
7. Application information
Table 7.
Application information
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 550 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
Parameter
average output power
power gain
input return loss
drain efficiency
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
Conditions
Min Typ
-
-
-
-
-
-
29.5
10
17.5 19
33.5 37.5
73
1.7
4.8
Max
-
-
5.5
-
Unit
W
dB
dB
%
ACPR
400k
adjacent channel power ratio (400 kHz)
ACPR
600k
adjacent channel power ratio (600 kHz)
EVM
rms
EVM
M
RMS EDGE signal distortion error
peak EDGE signal distortion error
61.5 59.5
dBc
69.5
dBc
3
10
%
%
7.1 Ruggedness in class-AB operation
The BLF6G20-75 and BLF6G20LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 550 mA; P
L
= 75 W (CW); f = 1990 MHz.
BLF6G20-75_BLF6G20LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 13
BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
7.2 One-tone CW
21
G
p
(dB)
20
G
p
19
18
17
16
15
14
0
20
40
60
80
η
D
50
40
30
20
10
0
100
P
L
(W)
001aah674
70
η
D
(%)
60
V
DS
= 28 V; I
Dq
= 550 mA; f = 1990 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power;
typical values
7.3 Two-tone CW
21
G
p
(dB)
20
19
18
17
η
D
16
15
14
0
20
40
60
20
10
0
80
100
P
L(PEP)
(W)
G
p
001aah675
70
η
D
(%)
60
50
40
30
V
DS
= 28 V; I
Dq
= 550 mA; f
1
= 1989.95 MHz; f
2
= 1990.05 MHz.
Fig 2.
Two-tone CW power gain and drain efficiency as functions of peak envelope load
power; typical values
BLF6G20-75_BLF6G20LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 13
BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
0
IMD
(dBc)
−20
001aah676
0
IMD3
(dBc)
−20
001aah677
IMD3
IMD5
−40
IMD7
−60
−40
(1)
(2)
(3)
(4)
(5)
−60
−80
0
60
120
P
L(PEP)
(W)
180
−80
0
60
120
P
L(PEP)
(W)
180
V
DS
= 28 V; I
Dq
= 550 mA; f
1
= 1989.95 MHz;
f
2
= 1900.05 MHz.
V
DS
= 28 V; f
1
= 1989.95 MHz; f
2
= 1900.05 MHz.
(1) 450 MHz
(2) 500 MHz
(3) 550 MHz
(4) 600 MHz
(5) 650 MHz
Fig 3.
Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
Fig 4.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
7.4 GSM-EDGE
20
G
p
(dB)
18
η
D
G
p
001aah678
60
η
D
(%)
40
−50
ACPR
(dB)
−60
ACPR
400k
001aah679
16
20
−70
ACPR
600k
14
0
20
40
60
80
P
L(AV)
(W)
0
−80
0
20
40
60
80
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 550 mA; f = 1990 MHz; T
case
= 25
C.
V
DS
= 28 V; I
Dq
= 550 mA; f = 1990 MHz; T
case
= 25
C.
Fig 5.
GSM-EDGE power gain and drain efficiency as
functions of average load power; typical
values
Fig 6.
GSM-EDGE ACPR at 400 kHz and at 600 kHz as
functions of average load power; typical
values
BLF6G20-75_BLF6G20LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 13
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