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BCW68HTA

Description
Bipolar Transistors - BJT PNP Low Saturation
CategoryDiscrete semiconductor    The transistor   
File Size37KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

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Bipolar Transistors - BJT PNP Low Saturation

BCW68HTA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
GuidelineCECC50002-234
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
Base Number Matches1
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 - MARCH 2001
PARTMARKING DETAILS –
BCW68F –
BCW68G –
BCW68H –
DF
DG
DH
BCW68FR –
BCW68GR –
BCW68HR –
7T
5T
7N
BCW68
C
B
E
COMPLEMENTARY TYPES – BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current(10ms)
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-60
-45
-5
-1000
-800
-100
330
-55 to +150
SOT23
UNIT
V
V
V
mA
mA
mA
mW
°C
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