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T2
BAT754 series
Schottky barrier diodes
Rev. 3 — 9 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
3
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
R
V
F
I
R
[1]
Parameter
reverse voltage
forward voltage
reverse current
Conditions
Min
-
Typ
-
600
-
Max
30
-
2
Unit
V
mV
A
I
F
= 100 mA
V
R
= 25 V
[1]
[1]
-
-
Pulse test: t
p
300
s;
0.02.
2. Pinning information
Table 2.
Pin
BAT754
1
2
3
anode
not connected
cathode
1
2
3
1
3
2
n.c.
006aaa436
Pinning
Description
Simplified outline
Graphic symbol
NXP Semiconductors
BAT754 series
Schottky barrier diodes
Pinning
…continued
Description
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
1
3
2
006aaa439
Table 2.
Pin
BAT754A
1
2
3
Simplified outline
Graphic symbol
BAT754C
1
2
3
anode (diode 1)
anode (diode 2)
common cathode
1
2
3
1
3
2
006aac984
BAT754S
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
3
1
1
2
3
2
006aaa437
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT754 series
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
BAT754
BAT754A
BAT754C
BAT754S
[1]
* = placeholder for manufacturing site code.
Marking codes
Marking code
[1]
2K*
2L*
2M*
2N*
Type number
BAT754_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 9 October 2012
2 of 10
NXP Semiconductors
BAT754 series
Schottky barrier diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
T
j
= 25
C
before surge.
Parameter
Conditions
Min
-
-
Max
30
200
300
Unit
V
mA
mA
mA
t
p
1 s;
0.5
sine wave;
t
p
< 8.3 ms
[1]
-
600
Per device; one diode loaded
T
j
T
amb
T
stg
[1]
-
55
65
125
+125
+150
C
C
C
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Per device; one diode loaded
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
[1]
Typ
-
-
-
-
600
-
-
Max
200
260
340
420
-
2
10
Unit
mV
mV
mV
mV
mV
A
pF
reverse current
diode capacitance
Pulse test: t
p
300
s;
0.02.
V
R
= 25 V
f = 1 MHz; V
R
= 1 V
-
-
BAT754_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 9 October 2012
3 of 10
NXP Semiconductors
BAT754 series
Schottky barrier diodes
10
3
I
F
(mA)
10
2
(1)
006aac830
(2)
,
5
DDD
(3)
10
(1)
(2)
(3)
1
10
-1
0.0
0.4
0.8
V
F
(V)
1.2
9
5
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
Fig 1.
Forward current as a function of forward
voltage; typical values
15
C
d
(pF)
Fig 2.
Reverse current as a function of reverse
voltage; typical values
msa891
10
5
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAT754_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 9 October 2012
4 of 10
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