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LHC25-15

Description
0.025 A, 15000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size46KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet View All

LHC25-15 Overview

0.025 A, 15000 V, SILICON, SIGNAL DIODE

LHC
RHC
HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 40,000 VOLTS
FAST RECOVERY (RHC SERIES)
LOW LEAKAGE
EDI Type No.
Avg.
Fwd. Current,
I
O
at 50
O
C
25mA
Peak
Reve rse V olta ge
PRV (V olts )
Max . Fwd. Volta ge
o
Drop at 25 C And I
O
V
F
(Vol ts)
Case Sty le
LHC25-8
-10
-1 2
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
RHC25-8
-1 0
-1 2
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
o
Max. DC Reverse Current @ PRV and 25 C, I
R
8, 000
10,0 00
12,0 00
15,0 00
20,0 00
25,000
30,0 00
35,0 00
40,0 00
8,000
10,0 00
12,0 00
15,0 00
20,0 00
25,0 00
30,0 00
35,0 00
40,0 00
LHC SERIES
STANDARD
RECOVERY
30
30
30
60
60
60
90
90
90
30
30
30
60
60
60
90
90
90
A
A
A
B
B
B
C
C
C
A
A
A
B
B
B
C
C
C
RHC SERIES
FAST
RECOVERY
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 C, I
R
Max. DC Reverse Current @ PRV and 100 C, I
R
o
o
1
A
1
60
A
A
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range,T
A
o
40
A
-55
o
C to +150
o
C
-55
o
C to +150
o
C
3 Amps
Max. Reverse Recovery Time , t
rr
(Fig.4)
100 nanosec
-55
o
C to +125
o
C
-55
o
C to +150
o
C
3 Amps
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Ambient Operating Temperature Range,T
A
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
NOTES:
o
1. Maximum lead and terminal temperature for soldering, 3/8 inch from case, 5 seconds at 250 C.
2. If operated over 10,000 v/inch in length, devices should be immersed in oil or re-encapsulated.
EDI reserves the right to change these specifications at any time without notice.

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