Chip Schottky Barrier Diodes
SK52-B THRU SK510-B
Silicon epitaxial planer type
Formosa MS
SMB
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.142(3.6)
0.126(3.2)
0.173(4.4)
0.157(4.0)
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.00878 ounce, 0.293 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
5.0
150
1
50
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JL
C
J
T
STG
-55
12
380
V
R
= V
RRM
T
A
= 125 C
Junction to lead
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
SS52
SS53
SS54
SS55
SS56
SS58
S510
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
(V)
SK52-B
SK53-B
SK54-B
SK55-B
SK56-B
SK58-B
SK510-B
20
30
40
50
60
80
100
(V)
14
21
28
35
42
56
70
(V)
20
30
40
50
60
80
100
(V)
0.50
-55 to +125
*1 Repetitive peak reverse voltage
0.70
-55 to +150
0.85
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (SK52B THRU SK510B)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
6.0
5.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
4-B
-B~
SK
56
4.0
-
55
SK
SK
3.0
2.0
1.0
0
0
20
40
60
10
3.0
1.0
-B~
SK
5
-B
SK
52
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
SK
58
SK
55
-B
~S
K5
Tj=25 C
Pulse Width 300us
1% Duty Cycle
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
0.1
PEAK FORWARD SURGE CURRENT,(A)
120
.01
.1
.3
.5
.7
.9
10
-B
52
-B
K5
~S
B
0-
51
SK
B~
B
4-
1.1
1.3
1.5
90
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
60
30
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
1400
1200
1000
800
600
400
200
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
Tj=75 C
1.0
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
DSP and ARM Processors
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