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2N3868

Description
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size112KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N3868 Overview

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN

2N3868 Parametric

Parameter NameAttribute value
Objectid8059221303
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)600 ns
Maximum opening time (tons)100 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/350
DEVICES
LEVELS
2N3867
2N3868
2N3867S
2N3868S
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJA
Max.
175
Unit
°C/mW
Symbol 2N3867
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
, T
stg
40
40
4.0
3.0
1.0
-65 to +200
2N3868
60
60
Unit
Vdc
Vdc
Vdc
mAdc
W/°C
°C
TO-5 *
2N3867, 2N3868
Note: *
Electrical characteristics for “S” suffix devices are identical to the “non S”
corresponding devices.
1/ Derate linearly 5.71mW/°C for T
A
> +25°C
2/ Derate linearly 57.1mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
2N3867, S
I
C
= 10μAdc
2N3868, S
Collector-Base Cutoff Current
V
CB
= 40Vdc
2N3867, S
V
CB
= 60Vdc
2N3868, S
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 40Vdc
2N3867, S
V
CE
= 60Vdc
2N3868, S
2N3867, S
V
CE
= 40Vdc, T
A
= +150°C
2N3868, S
V
CE
= 60Vdc, T
A
= +150°C
T4-LDS-0170 Rev. 1 (101121)
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CBO
I
EBO
40
60
100
100
1.0
1.0
50
50
Vdc
µAdc
µAdc
TO-39 * (TP-205AD)
2N3867S, 2N3868S
I
CEX
µAdc
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