Power Transistors
2SC5478
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
4.5
10.0
s
Features
q
q
q
φ3.2±0.1
5°
26.5±0.5
3.0±0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(T
C
=25˚C)
Ratings
1700
1700
600
5
25
14
7.5
60
3.0
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
5°
23.4
22.0±0.5
2.0 1.2
5°
18.6±0.5
5°
5°
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3
0.7±0.1
5.45±0.3
5.5±0.3
5°
1
2
3
2.0
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 1.75A
I
C
= 7A, I
B
= 1.75A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 7A, I
B1
= 1.75A, I
B2
= –3.5A
3
2.7
0.2
5
min
typ
max
50
1
50
12
3
1.5
V
V
MHz
µs
µs
Unit
µA
mA
µA
1
Power Transistors
P
C
— Ta
100
2SC5478
Area of safe operation, horizontal operation ASO
35
f=64kHz, T
C
<90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
Collector power dissipation P
C
(W)
90
80
70
60
50
40
30
20
10
0
0
20
40
(2)
(3)
(1)
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
30
Collector current I
C
(A)
25
20
15
10
5
<1mA
0
500
1000
1500
2000
0
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
2