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2SC5476

Description
Power Bipolar Transistor, 3A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size349KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SC5476 Overview

Power Bipolar Transistor, 3A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN

2SC5476 Parametric

Parameter NameAttribute value
Objectid1546485419
Parts packaging codeTO-220ML
package instructionTO-220ML, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage85 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
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