This product has been retired and is not available for designs. For new and current designs,
S29GL064A supersedes Am29LV640M H/L and is the factory-recommended migration path. Please
refer to the S29GL064A datasheet for specifications and ordering information. Availability of this
document is retained for reference and historical purposes only.
April 2005
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that
originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appro-
priate, and changes will be noted in a revision summary.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number
26191
Revision
F
Amendment
+3
Issue Date
December 14, 2005
THIS PAGE LEFT INTENTIONALLY BLANK.
Am29LV640MH/L
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™
3.0 Volt-only Uniform Sector Flash Memory
with VersatileI/O™ Control
This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV640M H/L and is the factory-recommended migration path.
Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
VersatileI/O™ control
— Device generates data output voltages and tolerates
data input voltages on the DQ inputs/outputs as
determined by the voltage on the V
IO
pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 µm MirrorBit process
technology
SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-eight 32 Kword/64-Kbyte sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
京公网安备 11010802033920号
EEWORLD
