DBL151G datasheet, PDF - EEWORLD Datasheet

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DBL151G: Description1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size56KB，2 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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DBL151G Overview

1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

DBL151G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDIP-T4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	50 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDIP-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
Terminal surface	PURE TIN
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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DBL151G

THRU

DBL159G

Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

Voltage Range

50 to 1400 Volts

Current

1.5 Amperes

DBL

Features

a

UL Recognized File # E-96005

Glass passivated junction

Ideal for printed circuit board

Reliable low cost construction utilizing

molded plastic technique

High surge current capability

High temperature soldering guaranteed:

260+ / 10 seconds at 5 lbs., ( 2.3 kg )

tension

Small size, simple installation

Leads solderable per MIL-STD-202

Method 208

.102(2.60)

.094(2.40)

.255(6.5)

.245(6.2)

.315(8.0)

.285(7.24)

.335(8.51)

.320(8.12)

.08(2.03)

.05(1.27)

.045(1.14)

.035(0.89)

.023(0.58)

.018(0.46)

.205(5.2)

.195(5.0)

.185(4.69)

.150(3.81)

.075(1.90)

.055(1.39)

.013(0.33)

.0088(0.22)

.350(8.9)

.300(7.6)

DBLS

.047(1.20)

.040(1.02)

.205(5.2)

.195(5.0)

.404(10.3)

.386(9.80)

.335(8.51)

.320(8.13)

45

0

.255(6.5)

.245(6.2)

.013(0.33)

.0088(0.22)

.102(2.60)

.094(2.40)

.060(1.53)

.040(1.02)

.013(0.33)

.003(0.076)

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25+ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

DBL DBL DBL DBL DBL DBL DBL DBL DBL

151G 152G 153G 154G 155G 156G 157G 158G 159G

DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS

151G 152G 153G 154G 155G 156G 157G 158G 159G

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

@T

A

= 40+

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated Load

(JEDEC method )

Maximum Instantaneous Forward Voltage

@ 1.5A

Maximum DC Reverse Current @ T

A

=25+

at Rated DC Blocking Voltage @ T

A

=125+

Typical Thermal Resistance (Note) RÛJA

RÛJL

Operating Temperature Range T

J

Storage Temperature Range T

STG

50

35

50

100 200 400 600 800 1000 1200 1400

70 140 280 420 560 700 840 980

100 200 400 600 800 1000 1200 1400

V

A

1.5

50

1.1

10

500

40

15

-55 to +150

1.25

V

uA

+

/w

+

Note: Thermal resistance from Junction to Ambient and from Junction to Lead Mounted on

P.C.B. with 0.51 x 0.51” (13 x 13mm) Copper Pads.

DBL151G Related Products

	DBL151G	DBL154G	DBL159G
Description	1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to
package instruction	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4
Reach Compliance Code	compli	compli	compli
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	50 V	400 V	1400 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.25 V
JESD-30 code	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4
Maximum non-repetitive peak forward current	50 A	50 A	50 A
Number of components	4	4	4
Phase	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Maximum output current	1.5 A	1.5 A	1.5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	50 V	400 V	1400 V
surface mount	NO	NO	NO
Terminal surface	PURE TIN	PURE TIN	Pure Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL
JESD-609 code	e3	e3	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
Base Number Matches	1	1	-

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