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Datasheet> All Categories > Discrete semiconductor> The transistor> KSC1008CYTA
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KSC1008CYTA

Description
700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size105KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSC1008CYTA Overview

700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

KSC1008CYTA Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

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KSC1008 NPN Epitacial Silicon Transistor
September 2006
KSC1008
NPN Epitacial Silicon Transistor
Features
• Low frequency amplifier medium speed switching.
• High Collector-Base Voltage : V
CBO
=80V.
• Collector Current : I
C
=700mA
• Collector Power Dissipation : P
C
=800mW
• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector)
• Complement to KSA708
KSC1008
1 2 3
tm
TO-92
: 1. Emitter 2. Base
3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings *
T
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Collector Power Dissipation
Junction Temperature
Storage Temperature
a
= 25°C unless otherwise noted
Parameter
Value
80
60
8
700
800
+150
-55 ~ +150
Units
V
V
V
mA
mW
°C
°C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics *
T
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
a
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
80
60
8
Typ.
Max.
Units
V
V
V
0.1
0.1
40
0.2
0.86
30
50
8
400
0.4
1.1
µA
µA
V
V
MHz
pF
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSC1008 Rev. B

KSC1008CYTA Related Products

KSC1008CYTA KSC1008COBU KSC1008_06 KSC1008 KSC1008YTA KSC1008YBU KSC1008RBU KSC1008GTA
Description 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Lead free Lead free - - Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to - conform to conform to conform to conform to conform to
Maker Fairchild - - - Fairchild Fairchild Fairchild Fairchild
Parts packaging code TO-92 TO-92 - - TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 TO-92, 3 PIN - CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 - - 3 3 3 3
Reach Compliance Code compli unknow - unknow compli compli unknow compli
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.7 A 0.7 A - 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A
Collector-emitter maximum voltage 60 V 60 V - 60 V 60 V 60 V 60 V 60 V
Configuration SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 70 - 40 120 120 40 200
JEDEC-95 code TO-92 TO-92 - TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3 - - e3 e3 e3 e3
Maximum operating temperature 150 °C 150 °C - - 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND - ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT APPLICABLE - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT SPECIFIED
Polarity/channel type NPN NPN - NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.8 W 0.8 W - - 0.8 W 0.8 W 0.8 W 0.8 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO - NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) - - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED NOT APPLICABLE - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT SPECIFIED
Nominal transition frequency (fT) 50 MHz 50 MHz - 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz

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