P-Channel Enhancement Mode
MOSFET General Purpose
Amplifier Switch
3N163 / 3N164
FEATURES
CORPORATION
•
Very High Input Impedance
•
High Gate Breakdown
Switching
•
Fast Capacitance
Low
•
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
Static Gate-Source Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . .
±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
D
TO-72
C
S
G
1503
ORDERING INFORMATION
Part
3N163-64
X3N163-64
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
3N163
3N164
UNITS
TEST CONDITIONS
V
GS
= -40V, V
DS
= 0 (3N163)
V
GS
= -30V, V
DS
= 0 (3N164)
T
A
= +125
o
C
I
D
= -10µA, V
GS
= 0
I
S
= -10µA, V
GD
= 0, V
BD
= 0
-5.0
-5.0
-6.5
400
800
300
ohms
mA
pA
V
V
DS
= V
GS
, I
D
= -10µA
V
DS
= -15V, I
D
= -10µA
V
DS
= -15V, I
D
= -0.5mA
V
DS
= -15V, V
GS
= 0
V
SD
= 15V, V
GS
= V
DB
= 0
V
GS
= -20V, I
D
= -100µA
V
DS
= +15V, V
GS
= -10V
MIN MAX MIN MAX
I
GSS
Gate-Body Leakage Current
-10
-25
BV
DSS
BV
SDS
V
GS(th)
V
GS(th)
V
GS
I
DSS
I
SDS
r
DS(on)
I
D(on)
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
Threshold Voltage
Gate Source Voltage
Zero Gate Voltage Drain Current
Source Drain Current
Drain-Source on Resistance
On Drain Current
-40
-40
-2.0
-2.0
-2.5
-5.0
-5.0
-6.5
200
400
250
-30
-30
-2.0
-2.0
-2.5
-10
-25
pA
-5.0 -30.0 -3.0 -30.0
3N163 / 3N164
CORPORATION
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
g
fs
g
os
C
iss
C
rss
C
oss
PARAMETER
Forward Transconductance
Output Admittance
Input Capacitance - Output Shorted
Reverse Transfer Capacitance
Output Capacitance - Input Shorted
3N163
MIN
2000
MAX
4000
250
2.5
0.7
3.0
3N164
MIN
1000
MAX
4000
250
2.5
0.7
3.0
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz
(Note 1)
µS
V
DS
= -15V, I
D
= -10mA, f = 1kHz
UNITS
TEST CONDITIONS
NOTE 1:
For design reference only, not 100% tested.
SWITCHING CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
t
on
t
r
t
off
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
3N163
MIN
MAX
12
24
50
3N164
MIN
MAX
12
24
50
ns
V
DD
= -15V
I
D(on)
= -10mA (Note 1)
R
G
= R
L
= 1.4kΩ
UNITS
TEST CONDITIONS
SWITCHING TIMES TEST CIRCUIT
V
DD
10%
10%
t
r
R
1
90%
10%
V
OUT
R
2
t
on
10%
t
off
50Ω
INPUT PULSE
RISE TIME < 2ns
PULSE WIDTH > 200ns
SAMPLING SCOPE
t
r
< 0.2ns
C
IN
< 2pF
R
IN
> 10MΩ
0170
0160
stm32/stm8
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