KM62V256D, KM62U256D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
History
Initial draft
Finalize
- Add 70ns part in KM62U256D Family
- Show I
CC
read only, and increased value
I
CC
= 2mA
→I
CC
Read = 5mA
- Seperate I
CC1
read and write
I
CC1
= 5mA→I
CC1
Read = 5mA, I
CC1
Write = 10mA
- Improved standby current(I
SB1
)
Commercial part : 10µA→5µA
Extended and Industrial part : 20µA→5µA
- Improved V
IL
(Min.) : 0.4V→0.6V
- Improved power dissipation : 0.7W→1W
Draft Data
April 1, 1997
November 12, 1997
Remark
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
November 1997
KM62V256D, KM62U256D Family
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
• Process Technology : TFT
• Organization : 32Kx8
• Power Supply Voltage
KM62V256D family : 2.7~3.3V
KM62U256D family : 3.0~3.6V
• Low Data Retention Voltage : 2V(Min)
• Three state output and TTL Compatible
• Package Type : 28-SOP-450
28-TSOP1-0813.4F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM62V256D and KM62U256D families are fabricated
by SAMSUNG′s advanced CMOS process technology. The
families support various operating temperature range and
have various package types for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PRODUCT FAMILY
Product
Family
KM62V256DL-L
KM62U256DL-L
KM62V256DLE-L
KM62U256DLE-L
KM62V256DLI-L
KM62U256DLI-L
Industrial(-40~85°C)
Extended(-25~85°C)
Operating
Temperature
V
CC
Range
Speed
(ns)
70
1)
/100
70
1)
/85/100
70
1)
/100
70
1)
/85/100
70
1)
/100
70
1)
/85/100
5µA
35mA
28-SOP
2)
28-TSOP1-F/R
Power Dissipation
Standby
(I
SB1
, Max)
Operating
(Icc
2
)
PKG Type
Commercial(0~70°C)
3.0V ~3.6V
2.7V ~ 3.3V
3.0V ~3.6V
2.7V ~ 3.3V
3.0V ~3.6V
2.7V ~ 3.3V
1. The parameter is measured with 30pF test load.
2. KM62V256D Family support SOP package without 100ns speed bin.
PIN DESCRIPTION
OE
A11
A9
A8
VCC A13
WE
WE
VCC
A13 A14
A12
A8
A7
A6
A9
A5
A4
A11
A3
OE
A10 A3
A4
CS
A5
A6
I/O8
A7
I/O7 A12
A14
I/O6 VCC
WE
I/O5
A13
A8
I/O4
A9
A11
OE
14
13
12
11
10
9
8
7
6
5
4
3
2
1
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
FUNCTIONAL BLOCK DIAGRAM
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
Clk gen.
A13
A8
A12
A14
A4
A5
A6
A7
Precharge circuit.
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
28-TSOP
Type1 - Forward
23
22
21
20
19
18
17
16
15
Row
select
Memory array
256 rows
128×8 columns
28-SOP
21
20
19
18
17
16
15
28-TSOP
Type1 - Reverse
21
22
23
24
25
26
27
28
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
CS
I/O
1
I/O
8
Data
cont
I/O Circuit
Column select
Data
cont
A10 A3
A0
A1 A2 A9
A11
Pin Name
CS
OE
WE
A
0
~A
14
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Pin Name
I/O
1
~I/O
8
Vcc
Vss
NC
Function
WE
Control
logic
Data Inputs/Outputs
OE
Power
Ground
No connect
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.0
November 1997
KM62V256D, KM62U256D Family
PRODUCT LIST
Commercial Temperature Products
(0~70°C)
Part Name
KM62V256DLG-7L
KM62V256DLTG-7L
KM62V256DLRG-7L
CMOS SRAM
Industrial Temperature Products
(-40~85°C)
Part Name
KM62V256DLGI-7L
KM62V256DLTGI-7L
Extended Temperature Products
(-25~85°C)
Part Name
KM62V256DLGE-7L
KM62V256DLTGE-7L
Function
28-SOP, 70ns, 3.3V
28-TSOP F, 70ns, 3.3V
Function
28-SOP, 70ns, 3.3V
28-TSOP F, 70ns, 3.3V
Function
28-SOP, 70ns, 3.3V
28-TSOP F, 70ns, 3.3V
28-TSOP R, 70ns, 3.3V
KM62V256DLTG-10L 28-TSOP F, 100ns, 3.3V KM62V256DLTGE-10L 28-TSOP F, 100ns, 3.3V KM62V256DLTGI-10L 28-TSOP F, 100ns, 3.3V
28-TSOP R, 70ns, 3.3V KM62V256DLRGE-7L
28-TSOP R, 70ns, 3.3V KM62V256DLRGI-7L
KM62V256DLRG-10L 28-TSOP R, 100ns, 3.3V KM62V256DLRGE-10L 28-TSOP R, 100ns, 3.3V KM62V256DLRGI-10L 28-TSOP R, 100ns, 3.3V
KM62U256DLG-7L
KM62U256DLG-8L
KM62U256DLG-10L
KM62U256DLTG-7L
KM62U256DLTG-8L
28-SOP, 70ns, 3.0V
28-SOP, 85ns, 3.0V
28-SOP, 100ns, 3.0V
28-TSOP F, 70ns, 3.0V
28-TSOP F, 85ns, 3.0V
KM62U256DLGE-7L
KM62U256DLGE-8L
KM62U256DLGE-10L
KM62U256DLTGE-7L
KM62U256DLTGE-8L
KM62U256DLRGE-7L
28-SOP, 70ns, 3.0V
28-SOP, 85ns, 3.0V
28-SOP, 100ns, 3.0V
28-TSOP F, 70ns, 3.0V
28-TSOP F, 85ns, 3.0V
28-TSOP R, 70ns, 3.0V
28-TSOP R, 85ns, 3.0V
KM62U256DLGI-7L
KM62U256DLGI-8L
KM62U256DLGI-10L
KM62U256DLTGI-7L
KM62U256DLTGI-8L
KM62U256DLRGI-7L
KM62U256DLRGI-8L
28-SOP, 70ns, 3.0V
28-SOP, 85ns, 3.0V
28-SOP, 100ns, 3.0V
28-TSOP F, 70ns, 3.0V
28-TSOP F, 85ns, 3.0V
28-TSOP R, 70ns, 3.0V
28-TSOP R, 85ns, 3.0V
KM62U256DLTG-10L 28-TSOP F, 100ns, 3.0V KM62U256DLTGE-10L 28-TSOP F, 100ns, 3.0V KM62U256DLTGI-10L 28-TSOP F, 100ns, 3.0V
KM62U256DLRG-7L 28-TSOP R, 70ns, 3.0V
KM62U256DLRG-8L
28-TSOP R, 85ns, 3.0V KM62U256DLRGE-8L
KM62U256DLRG-10L 28-TSOP R, 100ns, 3.0V KM62U256DLRGE-10L 28-TSOP R, 100ns, 3.0V KM62U256DLRGI-10L 28-TSOP R, 100ns, 3.0V
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
OE
X
1)
H
L
X
1)
WE
X
1)
H
H
L
I/O
High-Z
High-Z
Dout
Din
Mode
Deselected
Output Disabled
Read
Write
Power
Standby
Active
Active
Active
1. X means don′t care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.5 to V
CC
+0.5
-0.5 to 4.6
1.0
-65 to 150
0 to 70
-25 to 85
-40 to 85
Soldering temperature and time
T
SOLDER
260°C, 10sec (Lead Only)
Unit
V
V
W
°C
°C
°C
°C
-
Remark
-
-
-
-
KM62V256DL, KM62U256DL
KM62V256DLE, KM62U256DLE
KM62V256DLI, KM62U256DLI
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
November 1997
KM62V256D, KM62U256D Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
KM62V256D Family
KM62U256D Family
ALL
KM62V256D, KM62U256D Family
KM62V256D, KM62U256D Family
Min
3.0
2.7
0
2.2
-0.3
3)
Typ
3.3
3.0
0
-
-
CMOS SRAM
Max
3.6
3.3
0
Vcc+0.3
0.6
V
V
V
Unit
V
Note:
1. Commercial Product : T
A
=0 to 70°C, otherwise specified
Industrial Product : T
A
=-40 to 85°C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width≤30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE
1)
(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
V
OL
V
OH
I
SB
I
SB1
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=V
SS
to Vcc
I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA
CS≤0.2V, V
IN
≤0.2V,
V
IN
≥Vcc
-0.2V
Read
Write
-
-
2.4
-
-
Test Conditions
Min
-1
-1
-
-
Typ
-
-
2
1.5
6
23
-
-
-
0.1
Max
1
1
5
5
10
35
0.4
-
0.3
5
mA
V
V
mA
µA
Unit
µA
µA
mA
mA
Cycle time=Min,100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS≥Vcc-0.2V, Other inputs=0~Vcc
4
Revision 1.0
November 1997
KM62V256D, KM62U256D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. Refer to AC CHARACTERISTICS
CMOS SRAM
C
L
1)
1. Including scope and jig capacitance
AC CHARACTERISTICS
(KM62V256D Family:Vcc=3.0~3.6V, KM62U256D Family:Vcc=2.7~3.3V
Commercial product :T
A
=0 to 70°C, Extended product :T
A
=-25 to 85°C, Industrial product :T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
70
1)
ns
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
1. The parameter is measured with 30pF test load
85ns
Min
85
-
-
-
10
5
0
0
10
85
70
0
70
60
0
0
35
0
10
Max
-
85
85
40
-
-
30
30
-
-
-
-
-
-
-
25
-
-
-
Min
100
-
-
-
10
5
0
0
15
100
80
0
80
70
0
0
40
0
10
100ns
Max
-
100
100
50
-
-
35
35
-
-
-
-
-
-
-
35
-
-
-
Units
Max
-
70
70
35
-
-
30
30
-
-
-
-
-
-
-
25
-
-
-
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
10
5
0
0
5
70
60
0
60
50
0
0
30
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
See data retention waveform
Min
2.0
-
0
5
-
-
Typ
-
Max
3.6
5
-
-
Unit
V
µA
ms
5
Revision 1.0
November 1997
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