SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
A
KHB3D0N70P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB3D0N70P
O
C
F
E
G
B
Q
I
DIM MILLIMETERS
_
9.9 + 0.2
A
15.95 MAX
B
1.3+0.1/-0.05
C
_
D
0.8 + 0.1
_
E
3.6 + 0.2
_
F
2.8 + 0.1
3.7
G
H
0.5+0.1/-0.05
1.5
I
_
13.08 + 0.3
J
K
1.46
_
1.4 + 0.1
L
_
1.27+ 0.1
M
_
2.54 + 0.2
N
_
4.5 + 0.2
O
_ 0.2
2.4 +
P
_
9.2 + 0.2
Q
FEATURES
V
DSS
= 700V, I
D
= 3A
Drain-Source ON Resistance
: R
DS(ON)
= 3.5
@V
GS
= 10V
K
M
L
J
D
N
N
P
Qg(typ.) = 20.5nC
H
1
2
3
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Tc=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T
C
=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
)
RATING
SYMBOL
KHB3D0N70P KHB3D0N70F
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
T
j
T
stg
137
1.04
150
-55 150
N
1
2
3
1. GATE
2. DRAIN
3. SOURCE
UNIT
700
30
3.0
12
345
8.0
4.0
50
0.34
3.0*
A
12*
E
F
TO-220AB
V
V
A
KHB3D0N70F
C
O
B
G
P
mJ
mJ
V/ns
W
W/
D
M
M
K
L
J
Q
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
H
DIM MILLIMETERS
_
10.16 + 0.2
A
_
15.87 + 0.2
B
_
C
2.54 + 0.2
_
D
0.8 + 0.1
_ 0.1
E
3.18 +
_
F
3.3 + 0.1
_
12.57 + 0.2
G
_
0.5 + 0.1
H
J
13.0 MAX
_
K
3.23 + 0.1
L
1.47 MAX
_
2.54 + 0.2
M
_ 0.2
N
4.7 +
_
O
6.68 + 0.2
P
6.5
_
Q
2.76 + 0.2
R
thJC
R
thJA
0.91
62.5
2.5
62.5
/W
/W
* : Drain current limited by maximum junction temperature.
TO-220IS
D
G
S
2007. 1. 4
Revision No : 1
1/2
KHB3D0N70P/F
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
SYMBOL
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Drain Cut-off Current
Gate Leakage Current
Drain-Source ON Resistance
BV
DSS
BV
DSS
/ T
j
V
th
I
DSS
I
GSS
R
DS(ON)
I
D
=250 A, V
GS
=0V
I
D
=250 A, Referenced to 25
V
DS
=V
GS
, I
D
=250 A
V
DS
=700V, V
GS
=0V,
V
GS
= 30V, V
DS
=0V
V
GS
=10V, I
D
=1.5A
700
-
2.0
-
-
-
-
1
-
-
-
3.0
-
-
4.0
10
100
3.5
V
V/
V
A
nA
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SP
V
SD
t
rr
Q
rr
V
GS
<V
th
I
S
=3.0A, V
GS
=0V
I
S
=3.0A, V
DD
=350V,
dIs/dt=100A/ s
(Note 4)
-
-
-
-
-
-
-
-
730
3.2
3.0
A
12
1.6
-
-
V
ns
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
=350V, R
G
=25
I
D
=3.0A
(Note4, 5)
V
DS
=560V, I
D
=3.0A
V
GS
=10V
(Note4, 5)
-
-
-
-
-
-
-
-
-
-
20.5
3
10.5
11.5
48.5
50
57.5
642
67.2
10.2
25.6
-
-
33
107
ns
110
125
835
87.4
13.3
pF
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =71mH, I
S
=3.0A, V
DD
=50V, R
G
=25 , Starting T
j
=25 .
Note 3) I
S
3.0A, dI/dt
200A/
, V
DD
BV
DSS
, Starting T
j
=25
300 , Duty Cycle
2%.
.
Note 4) Pulse Test : Pulse width
Note 5) Essentially independent of operating temperature.
2007. 1. 4
Revision No : 1
2/2
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