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KBU806

Description
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

KBU806 Overview

8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

KBU806 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
package instructionPLASTIC, KBU, 4 PIN
Contacts4
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED, HIGH RELIABILITY
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-T4
JESD-609 codee0
Maximum non-repetitive peak forward current300 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
WTE
POWER SEMICONDUCTORS
KBU800 – KBU810
Pb
8.0A SINGLE-PHASE BRIDGE RECTIFIER
Features
!
Diffused Junction
A
KBU
Dim
Min
Max
22.70
23.70
A
3.60
4.10
B
4.20
4.70
C
1.70
2.20
D
10.30
11.30
E
4.50
5.60
G
4.60
5.60
H
25.40
J
19.30
K
16.80
17.80
L
6.60
7.10
M
4.10
4.60
N
1.20
1.30
P
All Dimensions in mm
!
Low Forward Voltage Drop
B
C
!
High Current Capability
D
!
High Reliability
!
High Surge Current Capability
K L
!
Ideal for Printed Circuit Boards
-
~ ~ +
E
!
Recognized File # E157705

J
Mechanical Data
!
!
!
!
!
!
!
Case: KBU, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 8.0 grams (approx.)
Mounting Position: Any
Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
H
M
G
N
P
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBU
800
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
C
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
KBU
801
100
70
KBU
802
200
140
KBU
804
400
280
8.0
KBU
806
600
420
KBU
808
800
560
KBU
810
1000
700
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage per leg
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 4.0A
@T
A
= 25°C
@T
A
= 125°C
I
FSM
V
FM
I
R
R
JA
R
JC
T
j,
T
STG
300
1.0
10
1.0
18
3.0
-65 to +150
A
V
µA
mA
°C/W
°C/W
°C
Typical Thermal Resistance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
Note: 1. Mounted on 75 x 75 x 3.0mm Al. plate.
2. Mounted on PCB at 9.5mm lead length with 12mm
2
copper pad.
KBU800 – KBU810
1 of 4
© 2006 Won-Top Electronics

KBU806 Related Products

KBU806 KBU800 KBU800_06 KBU801 KBU802 KBU810 KBU808 KBU804
Description 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible - incompatible - incompatible - incompatible
package instruction PLASTIC, KBU, 4 PIN R-PSFM-T4 - PLASTIC, KBU, 4 PIN - R-PSFM-T4 - R-PSFM-T4
Contacts 4 4 - 4 - 4 - 4
Reach Compliance Code unknow _compli - unknow - _compli - _compli
Other features UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY - UL RECOGNIZED, HIGH RELIABILITY - UL RECOGNIZED, HIGH RELIABILITY - UL RECOGNIZED, HIGH RELIABILITY
Minimum breakdown voltage 600 V 50 V - 100 V - 1000 V - 400 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON - SILICON - SILICON - SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V - 1 V - 1 V - 1 V
JESD-30 code R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 - R-PSFM-T4 - R-PSFM-T4
JESD-609 code e0 e0 - e0 - e0 - e0
Maximum non-repetitive peak forward current 300 A 300 A - 300 A - 300 A - 300 A
Number of components 4 4 - 4 - 4 - 4
Phase 1 1 - 1 - 1 - 1
Number of terminals 4 4 - 4 - 4 - 4
Maximum operating temperature 150 °C 150 °C - 150 °C - 150 °C - 150 °C
Minimum operating temperature -65 °C -65 °C - -65 °C - -65 °C - -65 °C
Maximum output current 8 A 8 A - 8 A - 8 A - 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT - FLANGE MOUNT - FLANGE MOUNT
Maximum repetitive peak reverse voltage 600 V 50 V - 100 V - 1000 V - 400 V
surface mount NO NO - NO - NO - NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE - THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE - SINGLE - SINGLE
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