www.fairchildsemi.com
KA5S-SERIES
KA5S0765C/KA5S0965/KA5S12656/KA5S1265
Fairchild Power Switch(FPS)
Features
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Wide Operating Frequency Range Up to 150kHz
Lowest Cost SMPS Solution
Lowest External Components
Low Start-up Current (Max:170µA)
Low Operating Current (Max:12mA)
Internal High Voltage SenseFET
Over Voltage Protection With Latch Mode (Min23V)
Over Load Protection With Latch Mode
Over Current Protection With Latch Mode
Internal Thermal Protection With Latch Mode
Pulse By Pulse Over Current Limiting
Under Voltage Lockout With Hysteresis
External Sync. Terminal
TO-220-5L
1
TO-3P-5L
1
1. Drain 2. Gnd 3. V
CC
4. FeedBack 5. Sync.
Internal Block Diagram
V
CC
3
V
CC
UVLO
+
-
15/9V
Soft Start
& Sync
5
VREF
Feedback 4
0.95mA
2.5V
R
VREF
V
CC
4µA
OLP
(Vfb=7.5V)
TSD
(Tj=160°C)
OVP
(V
CC
=25V)
1µs Window
Open Circuit
OCP
(V
S
=1.1V)
S
Q
R
Shutdown Latch
-
Vth.sy
+
7V
6V
-
+
Voffset
R
S
Q
Bias
Vref
2.5V
OSC
CLK
+
-
VREF UVLO
Drain
1
SenseFET
V
S
Rsense
2 GND
Power-on Reset
(VCC=6.5V)
Rev.1.0.5
©2003 Fairchild Semiconductor Corporation
KA5S-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5S0765C
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5S0965
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Darting
T
J
T
A
T
STG
650
±30
36
9.0
5.8
25(950)
30
-0.3 to V
CC
-0.3 to 8
170
1.33
+160
-25 to +85
-55 to +150
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Darting
T
J
T
A
T
STG
650
±30
28
7.0
5.6
27(570)
30
-0.3 to V
CC
-0.3 to 8
140
1.11
+160
-25 to +85
-55 to +150
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
Symbol
Value
Unit
2
KA5S-SERIES
Absolute Maximum Ratings
(Continued)
(Ta=25°C, unless otherwise specified)
Characteristic
KA5S12656
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5S1265
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Darting
T
J
T
A
T
STG
650
±30
48
12
8.4
42(785)
30
-0.3 to V
CC
-0.3 to 8
160
1.28
+160
-25 to +85
-55 to +150
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Darting
T
J
T
A
T
STG
650
±30
48
12
8.4
25(785)
30
-0.3 to V
CC
-0.3 to 8
160
1.28
+160
-25 to +85
-55 to +150
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W/°C
°C
°C
°C
Symbol
Value
Unit
Note:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V
DD
=50V, R
G
= 27Ω, starting T
j
= 25°C
3. L = 13µH, starting T
j
= 25°C
3
KA5S-SERIES
Electrical Characteristics (SFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
KA5S0765C
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(1)
Forward Transconductance
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5S0965
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(1)
Forward Transconductance
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
BV
DSS
I
DSS
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5B V
DSS
, I
D
=9.0A
(MOSFET switching time is
essentially independent of
operating temperature)
V
GS
=10V, I
D
=9.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
650
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
0.96
-
1750
190
78
20
23
85
30
74
12
35
-
50
200
1.2
-
-
-
-
50
55
180
70
95
-
-
nC
nS
pF
V
µA
µA
Ω
S
BV
DSS
I
DSS
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5B V
DSS
, I
D
=7.0A
(MOSFET switching
time is essentially
independent of operating
temperature)
V
GS
=10V, I
D
=7.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.0A
V
DS
=15V, I
D
=4.0A
650
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
1.25
-
1600
310
120
25
55
80
50
-
9.3
29.3
-
50
200
1.6
-
-
-
-
-
-
-
-
72
-
-
nC
nS
pF
V
µA
µA
Ω
S
Symbol
Conditions
Min.
Typ.
Max.
Unit
4
KA5S-SERIES
Electrical Characteristics (SFET Part)
(Continued)
(Ta = 25°C unless otherwise specified)
Parameter
KA5S12656
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On Resistance
(1)
Forward Transconductance
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5S1265
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(1)
Forward Transconductance
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
BV
DSS
I
DSS
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=12.0A
(MOSFET switching time is
essentially independent of
operating temperature)
V
GS
=10V, I
D
=12.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=6.0A
V
DS
=50V, I
D
=4.0A
650
-
-
-
5.7
-
-
-
-
-
-
-
-
-
-
-
-
-
0.72
-
2700
300
61
18
37
88
36
-
20
69
-
50
200
0.9
-
-
-
-
-
-
-
-
140
-
-
nC
nS
pF
V
µA
µA
Ω
S
BV
DSS
I
DSS
R
DS
(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5B V
DSS
, I
D
=12.0A
(MOSFET switching
time is essentially
independent of operating
temperature)
V
GS
=10V, I
D
=12.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=6.0A
V
DS
=50V, I
D
=4.0A
650
-
-
-
5.7
-
-
-
-
-
-
-
-
-
-
-
-
-
0.72
-
2700
300
61
18
37
88
36
-
20
69
-
50
200
0.9
-
-
-
-
-
-
-
-
140
-
-
nC
nS
pF
V
µA
µA
Ω
S
Symbol
Conditions
Min.
Typ.
Max.
Unit
Note:
1. Pulse Test : Pulse width
≤
300uS, Duty Cycle
≤
2%
2.MOSFET switching time is essentially independent of operating temperature
1
3. S
= ---
-
R
5
MCU
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