TSSP4P38
www.vishay.com
Vishay Semiconductors
IR Mid Range Proximity Sensors
FEATURES
• Up to 2 m for proximity sensing
• Uses modulated bursts at 38 kHz
• 940 nm peak wavelength
• Photo detector and preamplifier in one package
• Low supply current
1
2
3
16672
• Shielding against EMI
• Visible light is suppressed by IR filter
• Insensitive to supply voltage ripple and noise
• Supply voltage: 2.5 V to 5.5 V
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Pinning
1 = OUT, 2 = GND, 3 = V
S
DESCRIPTION
The TSSP4P38 is a compact infrared detector module
for proximity sensing applications. It receives 38 kHz
modulated signals and has a peak sensitivity of 940 nm.
The length of the detector’s output pulse varies in proportion
to the amount of light reflected from the object being
detected.
APPLICATIONS
• Object approach detection for activation of displays and
user consoles, signaling of alarms, etc.
• Simple gesture controls
• Differentiation of car arrival, static, car departure in
parking lots
• Reflective sensors for toilet flush
• Navigational sensor for robotics
PARTS TABLE
Carrier frequency
Package
Pinning
Dimensions (mm)
Mounting
Application
38 kHz
TSSP4P38
Mold
1 = OUT, 2 = GND, 3 = V
S
6.0 W x 6.95 H x 5.6 D
Leaded
Proximity sensors
BLOCK DIAGRAM
16833_5
PROXIMITY SENSING
+3V
3
33 kΩ
V
S
1
Input
AGC
Band
pass
Demo-
dulator
OUT
Envelope
signal
38 kHz
IR emitter
+3V
2
PIN
Control circuit
GND
Out to
μC
IR detector
Rev. 1.6, 01-Jun-15
1
Document Number: 82474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP4P38
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
S
I
S
V
O
V
S
- V
O
I
O
T
j
T
stg
T
amb
T
amb
85 °C
t
10 s, 1 mm from case
P
tot
T
sd
VALUE
-0.3 to +6
5
-0.3 to 5.5
-0.3 to (V
S
+ 0.3)
5
100
-25 to +85
-25 to +85
10
260
UNIT
V
mA
V
V
mA
°C
°C
°C
mW
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage (pin 3)
Supply current (pin 3)
Output voltage (pin 1)
Voltage at output to supply
Output current (pin 1)
Junction temperature
Storage temperature range
Operating temperature range
Power consumption
Soldering temperature
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Supply current
Supply voltage
Receiving distance
Output voltage low
Minimum irradiance
Maximum irradiance
Directivity
Direct line of sight,
test signal see fig. 1,
IR diode TSAL6200, I
F
= 200 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half receiving distance
TEST CONDITION
E
e
= 0, V
S
= 5 V
E
v
= 40 klx, sunlight
SYMBOL
I
SD
I
SH
V
S
d
V
OSL
E
e min.
E
e max.
1/2
50
± 45
0.12
2.5
45
100
0.25
MIN.
0.55
TYP.
0.7
0.8
5.5
MAX.
0.9
UNIT
mA
mA
V
m
mV
mW/m
2
W/m
2
deg
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, t = 10 ms)
1.0
t
po
- Output Pulse Width (ms)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
Output pulse width
Input burst length
t
pi
*
T
* t
pi
V
O
V
OH
V
OL
t
d
1)
t
10/f
0
is recommended for optimal function
16110_4
Output Signal
1)
2)
7/f
0
<
t
d
<
15/f
0
t
pi
- 5/f
0
<
t
po
<
t
pi
+ 6/f
0
t
po 2)
t
λ
= 950 nm,
optical test
signal,
Fig. 1
10
1000
100 000
E
e
- Irradiance
(mW/m
2
)
Fig. 1 - Output Active Low
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
Rev. 1.6, 01-Jun-15
2
Document Number: 82474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP4P38
www.vishay.com
Vishay Semiconductors
1.0
0.9
200
E
e min.
/E
e
- Rel. Responsivity
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
30
35
40
45
50
t
po
- Output Pulse Width (ms)
180
160
140
120
100
80
60
40
20
0
0.1
1
10
100
Burst length = 300 ms, f = f
O
f = f
0
± 5 %
Δf
(3 dB) = f
0
/10
f/f
0
- Relative Frequency
22088
E
e
- Irradiance (mW/m
2
)
Fig. 3 - Frequency Dependence of Responsivity
Fig. 6 - Max. Output Pulse Width vs. Irradiance
E
e min.
- Threshold Irradiance (mW/m
2
)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
Correlation with
ambient light
sources:
10 W/m
2
= 1.4 klx
(Std. ilum. A, T = 2855 K)
10 W/m
2
= 8.2 klx
(Daylight, T = 5900 K)
Wavelength of ambient
illumination:
λ
= 950 nm
E
e min.
- Threshold Irradiance (mW/m
2
)
5
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
-30
-10
10
30
50
70
90
0
0.01
0.1
1
10
100
E
e
- Ambient DC Irradiance (W/m
2
)
Fig. 4 - Sensitivity in Bright Ambient
T
amb
- Ambient Temperature (°C)
Fig. 7 - Sensitivity vs. Ambient Temperature
E
e min.
- Threshold Irradiance (mW/m
2
)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
f = f
0
f = 10 kHz
f = 100 kHz
S (λ)
rel
- Relative Spectral Sensitivity
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
750
800
850
900
950 1000 1050 1100 1150
ΔV
S
RMS
- AC Voltage on DC
Supply
Voltage (mV)
Fig. 5 - Sensitivity vs. Supply Voltage Disturbances
21425
λ-
Wavelength (nm)
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.6, 01-Jun-15
3
Document Number: 82474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP4P38
www.vishay.com
Vishay Semiconductors
140
Emitter: VSLB3940
120
100
1.1
1.0
Relative Response Distance
0.9
0.8
0.7
t
po
(ms)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-90 -70 -50 -30 -10
10
30
50
70
90
Directivity Characteristic of a
Reflective
Sensor
using
VSLB3940 and TSSP4P38
80
60
I
F
= 100 mA
40
20
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
I
F
= 10 mA
I
F
= 30 mA
I
F
= 50 mA
Angle (°)
Response Distance (m)
Fig. 9 - Angle Characteristic
Fig. 11 - t
po
vs. Distance Kodak Gray Card Plus 15 %
800
700
7
6
5
t
repeat
min. (ms)
600
d
max.
/d
min.
0
20
40
60
80
100 120 140 160 180
500
400
300
4
3
2
200
100
0
1
0
10 20 30 40 50 60 70 80 90 100 110 120
t
pi
(ms)
t
pi
(ms)
Fig. 10 - Max. Rate of Bursts
Fig. 12 - Dynamic Range of Sensor vs. t
pi
The typical application of the TSSP4P38 is a reflective sensor with analog information contained in its output. The sensor
evaluates the time required by the AGC to suppress a quasi continuous signal. The time required to suppress a continuous
signal is longer when the signal is strong than when the signal is weak. The result is an output pulse length which corresponds
to the distance of an object from the sensor. This kind of analog information can be evaluated by a microcontroller. The absolute
amount of reflected light depends on the infrared reflectivity of the object and is not evaluated. Only changes in the amount of
reflected light, and therefore changes in the pulse width can be evaluated with accuracy.
Example of a signal pattern:
t
repeat
= 500 ms
t
pi
= 120 ms, 38 kHz
Optical signal
Response of the
TSSP4P38
(strong reflection)
Response of the
TSSP4P38
(weak reflection)
Rev. 1.6, 01-Jun-15
4
Document Number: 82474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP4P38
www.vishay.com
Example for a sensor hardware:
There should be no common window in front of the emitter
and detector in order to avoid crosstalk by guided light
through the window.
The logarithmic characteristic of the AGC in the TSSP4P38
results in an almost linear relationship between distance and
pulse width. Ambient light has also some impact to the pulse
width of this kind of sensor, making the pulse shorter.
Vishay Semiconductors
IR detector
IR emitter
Separation
to avoid
crosstalk by
stray
light inside
the housing
PACKAGE DIMENSIONS
in millimeters
6
3.9
8.25
30.5
± 0.5
(5.55)
1
6.95
5.3
1
0.85 max.
0.89
OUT
GND
V
S
0.5 max.
2.54 nom.
1.3
0.7 max.
4.1
2.54 nom.
5.6
Marking area
Not indicated tolerances ± 0.2
technical drawings
according to DIN
specifications
Drawing-No.: 6.550-5169.11-4
Issue: 13; 17.12.08
16003
R 2.5
Rev. 1.6, 01-Jun-15
5
Document Number: 82474
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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