CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
Top View
CNY64ST
FEATURES
C
A
CNY65ST
C
E
V
D E
• Rated recurring peak voltage (repetitive)
V
IORM
= 1450 V
peak
• Thickness through insulation
≥
3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index:
CTI
≥
475
• Moisture sensitivity level MSL4
- Follow defined storage and soldering
requirements
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
17187-6
17187-5
DESCRIPTION
The CNY6XST, the high isolation voltage SMD version
optocouplers consist of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4 pin
plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
APPLICATIONS
• Solar and wind power diagnostic, monitoring, and
communication equipment
• Welding equipment
• High voltage motors
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I to IV at mains voltage
≤
300 V
- for appl. class I to IV at mains voltage
≤
600 V
- for appl. class I to III at mains voltage
≤
1000 V
according to DIN EN 60747-5-5 (VDE 0884-5)
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
•
DIN EN 60747-5-5 (VDE 0884-5)
Optocoupler for electrical safety requirements
•
IEC 60065
Safety for mains-operated
household apparatus
electronic
and
related
AGENCY APPROVALS
• DIN EN 60747-5-5 (VDE 0884-5)
• UL1577, file no. E76222
• VDE related features:
- rated impulse voltage (transient
V
IOTM
= 12 kV
peak
•
VDE 0160
Electronic equipment for electrical power installation
overvoltage),
- isolation test voltage (partial discharge test voltage),
V
pd
= 2.8 kV
peak
ORDERING INFORMATION
CNY64ST
CNY65ST
C
N
Y
6
#
PACKAGE
OPTION
X
X
X
CTR BIN
S
T
PART NUMBER
10.16 mm
15.24 mm
AGENCY CERTIFIED/PACKAGE
UL, VDE
SMD-4 HV, 400 mil high isolation distance
SMD-4 HV, 600 mil high isolation distance
50 to 300
CNY64ST
CNY65ST
50 to 150
CNY64AYST
CNY65AYST
CTR (%)
5 mA
80 to 240
CNY64ABST
CNY65ABST
100 to 300
CNY64AGRST
CNY65AGRST
Rev. 1.1, 26-Jun-14
Document Number: 82387
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
≤
10 μs
I
FSM
P
diss
T
j
V
CEO
V
ECO
I
C
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
P
diss
T
j
t = 1 min
t=1s
V
ISO
V
ISO
P
tot
T
amb
T
stg
2 mm from case,
≤
10 s
T
sld
VALUE
5
75
1.5
120
100
32
7
50
100
130
100
8.2
13.9
250
-55 to +85
-55 to +100
260
UNIT
V
mA
A
mW
°C
V
V
mA
mA
mW
°C
kV
RMS
kV
mW
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
AC isolation test voltage CNY64AxxxST
DC isolation test voltage CNY65AxxxST
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA, R
L
= 100
Ω
f = 1 MHz
V
CEsat
f
c
C
k
110
0.3
0.3
V
kHz
pF
I
C
= 1 mA
I
E
= 100 μA
V
CE
= 20 V, I
F
= 0 mA
V
CEO
V
ECO
I
CEO
32
7
200
V
V
nA
I
F
= 50 mA
V
R
= 0 V, f = 1 MHz
V
F
C
j
1.32
50
1.6
V
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.1, 26-Jun-14
Document Number: 82387
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
TEST CONDITION
PART
CNY64ST
CNY65ST
CNY64AYST
CNY65AYST
CNY64ABST
CNY65ABST
CNY64AGRST
CNY65AGRST
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
50
50
50
80
80
100
100
TYP.
MAX.
300
300
150
150
240
240
300
300
UNIT
%
%
%
%
%
%
%
%
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
SAFETY AND INSULATION PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
100 %, t
test
= 1 s
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IO
= 500 V, T
amb
= 25 °C
Insulation resistance
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Tracking resistance
(comparative tracking index)
Minimum external tracking
(creepage distance)
Insulation group IVa
Measured from
input pins to output pins
CNY64ST
CNY65ST
PART
SYMBOL
V
pd
V
pd
R
IO
R
IO
R
IO
I
si
P
so
V
IOTM
T
si
CTI
475
≥
9.5
≥
14
mm
mm
MIN.
2.8
2.2
10
12
10
11
10
9
120
250
12
150
TYP.
MAX.
UNIT
kV
kV
Ω
Ω
Ω
mA
mW
kV
°C
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
250
225
200
175
150
125
100
75
50
25
0
0
22292
V
IOTM
P
so
(mW)
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
pd
V
IOWM
V
IORM
= 1 s to 10 s
=1s
= 10 s
= 12 s
I
si
(mA)
0
25
50
75 100 125 150 175 200
t
3
t
test
t
4
t
1
t
Tr
= 60 s
t
2
t
stres
t
T
amb
(°C)
Fig. 1 - Safety Derating Diagram
13930
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
Rev. 1.1, 26-Jun-14
Document Number: 82387
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
TYP.
2.6
2.4
2.7
0.3
5
3
25
42.5
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
SWITCHING CHARACTERISTICS
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see figure 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see figure 4)
I
F
0
I
F
I
F
+5V
I
C
= 5 mA; adjusted through
input amplitude
0
I
C
100 %
90 %
t
p
t
R
G
= 50
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
100
Oscilloscope
R
L
1 M
C
L
20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
95 10900
Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 5 - Switching Times
I
F
0
I
F
= 10 mA
+5V
I
C
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10843
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
1 kΩ
Fig. 4 - Test Circuit, Saturated Operation
Rev. 1.1, 26-Jun-14
Document Number: 82387
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
P
tot
- Total Power Dissipation (mW)
280
240
Coupled device
200
160
Phototransistor
120
IR-diode
80
40
0
0
25
50
75
100
30
I
C
- Collector Current (mA)
I
F
= 25 mA
25
20
15
10
I
F
= 5 mA
I
F
= 10 mA
5
I
F
= 1 mA
I
F
= 2 mA
0
0
22509
0.1
0.2
0.3
0.4
0.5
22293
T
amb
- Ambient Temperature (°C)
V
CE
- Collector Emitter Voltage (sat) (V)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 9 - Collector Current vs. Collector Emitter Voltage
100
1000
I
F
- Forward Current (mA)
I
CEO
- Leakage Current (nA)
I
F
= 0 mA
100
10
1
0.1
V
CE
= 40 V
0.01
-55
-35
-15
5
25
45
65
85
10
T
amb
= -55 °C
T
amb
= -40 °C
T
amb
= 0 °C
T
amb
= 25 °C
1
T
amb
= 50 °C
T
amb
= 75 °C
T
amb
= 85 °C
V
CE
= 12 V
V
CE
= 24 V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
F
- Forward Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage
T
amb
- Ambient Temperature (°C)
Fig. 10 - Leakage Current vs. Ambient Temperature
45
1.2
I
F
= 30 mA
I
C
- Collector Current (mA)
40
35
30
25
20
15
10
5
0
0
2
N
CTR
- Normalized CTR (sat)
V
CE
= 0.4 V
I
F
= 10 mA
1.0
I
F
= 5 mA
0.8
0.6
I
F
= 1 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
0.4
0.2
0
-55
4
6
8
10
12
-35
-15
5
25
45
65
85
22508
V
CE
- Collector Emitter Voltage (NS) (V)
T
amb
- Ambient Temperature (°C)
Fig. 11 - Normalized CTR (sat) vs. Ambient Temperature
Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS)
Rev. 1.1, 26-Jun-14
Document Number: 82387
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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