K4M513233C - S(D)N/G/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
FEATURES
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
•
•
•
•
64ms refresh period (8K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
90Balls FBGA ( -SXXX -Pb, -DXXX -Pb Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4M513233C is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
K4M513233C-S(D)N/G/L/F75
K4M513233C-S(D)N/G/L/F7L
*1
Max Freq.
133MHz(CL=3), 111MHz(CL=2)
133MHz(CL=3), 83MHz(CL=2)
Interface
LVCMOS
Package
90 FBGA Pb
(Pb Free)
- S(D)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)
- S(D)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
Address configuration
Organization
16Mx32
Bank
BA0,BA1
Row
A0 - A12
Column Address
A0 - A8
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-
visions may apply.
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March 2006
K4M513233C - S(D)N/G/L/F
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
ss
Voltage on V
DD
supply relative to V
ss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
Mobile-SDRAM
Unit
V
V
°C
W
mA
-55 ~ +150
1.0
50
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Supply voltage
V
DDQ
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
V
IH
V
IL
V
OH
V
OL
I
LI
2.7
2.2
-0.3
2.4
-
-10
3.0
3.0
0
-
-
-
3.6
V
DDQ
+ 0.3
0.5
-
0.4
10
V
V
V
V
V
uA
1
2
3
I
OH
= -2mA
I
OL
= 2mA
4
Symbol
V
DD
Min
2.7
Typ
3.0
Max
3.6
Unit
V
Note
1
NOTES :
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VIH (max) = 5.3V AC.The overshoot voltage duration is
≤
3ns.
3. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
4. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
CAPACITANCE
(V
DD
= 3.0V & 3.3V, T
A
= 23°C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE
DQM
Address
DQ
0
~ DQ
31
Symbol
C
CLK
C
IN
C
IN
C
ADD
C
OUT
Min
1.5
1.5
1.5
1.5
2.0
Max
3.5
3.0
3.0
3.0
4.5
Unit
pF
pF
pF
pF
pF
Note
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March 2006
K4M513233C - S(D)N/G/L/F
DC CHARACTERISTICS
Mobile-SDRAM
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
Version
Parameter
Symbol
Test Condition
-75
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
-7L
Unit
Note
I
CC1
110
110
mA
1
I
CC
2P
1.0
mA
1.0
15
mA
5
8
mA
8
30
mA
I
CC
2PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC
2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
Precharge Standby Current
in non power-down mode
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
I
CC
2NS
Input signals are stable
I
CC
3P
CKE
≤
V
IL
(max), t
CC
= 10ns
Active Standby Current
in power-down mode
I
CC
3PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC
3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
-N/L
Internal TCSR
45
*4
500
450
425
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC
3NS
20
mA
Operating Current
(Burst Mode)
I
CC
4
150
105
mA
1
Refresh Current
I
CC
5
180
800
180
mA
uA
2
85/70
800
700
625
°C
3
Self Refresh Current
I
CC
6
CKE
≤
0.2V
-G/F
Full Array
1/2 of Full Array
1/4 of Full Array
uA
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : 45°C/70°C, In extended Temp : 45°C/85°C
4. It has +/-5
°C
tolerance.
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
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March 2006
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