BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
Rev. 3 — 9 September 2010
Product data sheet
1. Product profile
1.1 General description
The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless
surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and
superior performance up to 2700 MHz. Its power saving features include easy quiescent
current adjustment enabling class-AB operation and logic-level shutdown control to
reduce the supply current to 4
μA.
1.2 Features and benefits
400 MHz to 2700 MHz frequency operating range
16 dB small signal gain at 2 GHz
25 dBm output power at 1 dB gain compression
Integrated active biasing
External matching allows broad application optimization of the electrical performance
3.3 V or 5 V single supply operation
All pins ESD protected
1.3 Applications
Wireless infrastructure (base station,
repeater, backhaul systems)
Broadband CPE/MoCA
Industrial applications
E-metering
Satellite Master Antenna TV (SMATV)
WLAN/ISM/RFID
1.4 Quick reference data
Table 1.
Quick reference data
Input and output impedances matched to 50
Ω
, SHDN = HIGH (shutdown disabled). Typical values
at V
CC
= 5 V; I
CC
= 130 mA; T
case
= 25
°
C; unless otherwise specified.
Symbol Parameter
I
CC
f
G
p
P
L(1dB)
IP3
O
[1]
[2]
[3]
Conditions
V
CC
= 5.0 V
f = 2140 MHz
f = 2140 MHz
f = 2140 MHz
[3]
[1]
[2]
Min
50
400
Typ
-
-
Max
170
17.5
Unit
mA
dB
dBm
dBm
supply current
frequency
power gain
output power at 1 dB gain compression
output third-order intercept point
2700 MHz
14.5 16
23.5 24.5 -
34.5 37.5 -
The supply current is adjustable; see
Section 8.1 “Supply current adjustment”.
Operation outside this range is possible but not guaranteed.
P
L
= 11 dBm per tone; spacing = 1 MHz.
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
2. Pinning information
2.1 Pinning
terminal 1
index area
n.c.
V
CC(RF)
V
CC(RF)
n.c.
1
2
8
7
ICQ_ADJ
RF_IN
SHDN
V
CC(BIAS)
BGA7124
3
4
GND PAD
6
5
014aab046
Transparent top view
Fig 1.
HVSON8 package pin configuration
2.2 Pin description
Table 2.
Symbol
n.c.
V
CC(RF)
V
CC(BIAS)
SHDN
RF_IN
ICQ_ADJ
GND
[1]
[2]
[3]
Pin description
Pin
1, 4
2, 3
5
6
7
8
GND pad
Description
not connected
RF output for the power amplifier and DC supply input for the
RF transistor collector
[1]
bias supply voltage
[2]
shutdown control function enabled/disabled
RF input for the power amplifier
[1]
quiescent collector current adjustment controlled by an external resistor
RF and DC ground
[3]
This pin is DC-coupled and requires an external DC-blocking capacitor.
RF decoupled.
The center metal base of the SOT908-1 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Name
BGA7124
HVSON8
Description
plastic thermal enhanced very thin small outline
package; no leads; 8 terminals; body 3
×
3
×
0.85 mm
Version
SOT908-1
Type number Package
BGA7124
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 September 2010
2 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
4. Functional diagram
V
CC
V
CC(BIAS)
5
ICQ_ADJ
8
R2
SHDN 6
BIAS
ENABLE
BANDGAP
V/I
CONVERTER
R1
INPUT MATCH
RF_IN 7
2, 3 V
CC(RF)
RF_OUT
OUTPUT MATCH
GND
014aab047
Fig 2.
Functional diagram
5. Shutdown control
Table 4.
Mode
Idle
TX
Shutdown control settings
Mode description
medium power MMIC fully off;
minimal supply current
Function description
shutdown control enabled
Pin
SHDN
0
1
V
ctrl(sd)
(V)
Min
0
2.5
Max
0.7
I
ctrl(sd)
(μA)
Min
-
Max
2
9
medium power MMIC transmit mode shutdown control disabled
V
CC(BIAS)
-
BGA7124
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 September 2010
3 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
6. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC(RF)
V
CC(BIAS)
I
CC
V
ctrl(sd)
P
i(RF)
T
case
T
j
V
ESD
Parameter
RF supply voltage
bias supply voltage
supply current
shutdown control voltage
RF input power
case temperature
junction temperature
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
Charged Device Model (CDM);
According JEDEC standard 22-C101B
[1]
[2]
[3]
See
Figure 3
for safe operating area.
The supply current is adjustable; see
Section 8.1 “Supply current adjustment”.
If V
ctrl(sd)
exceeds V
CC(BIAS)
, the internal ESD circuit can be damaged. To prevent this, it is recommended that the I
ctrl(sd)
is limited to
20 mA. If the SHDN function is not used, the SHDN pin should be connected to the V
CC(BIAS)
pin.
Conditions
[1]
[1]
[1][2]
[3]
Min
-
-
50
0.0
-
−40
-
-
-
Max
6.0
6.0
200
V
CC(BIAS)
20
+85
150
2000
500
Unit
V
V
mA
V
dBm
°C
°C
V
V
250
I
CC
(mA)
200
014aab048
150
100
50
2
3
4
5
6
7
V
CC(RF)
(V)
Exceeding the safe operating area limits may cause serious damage to the product.
The impact on I
CC
due to the spread of the external ICQ resistor (R2) should be taken into account.
The product-spread on I
CC
should be taken into account (see
Section 8 “Static characteristics”).
Fig 3.
BGA7124 DC safe operating area
BGA7124
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 September 2010
4 of 33
NXP Semiconductors
BGA7124
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
7. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
T
case
= 85
°C;
V
CC
= 5 V;
I
CC
= 130 mA
[1]
Typ Max Unit
32
-
K/W
defined as thermal resistance from junction to GND paddle.
8. Static characteristics
Table 7.
Characteristics
Input and output impedances matched to 50
Ω
, pin SHDN = HIGH (shutdown disabled). Typical
values at V
CC
= 3.3 V or V
CC
= 5 V; T
case
= 25
°
C; unless otherwise specified.
Symbol Parameter
I
CC
supply current
Conditions
V
CC
= 3.3 V
R1 = 0
Ω;
R2 = 1330
Ω
R1 = 2.2
Ω;
R2 = 1070
Ω
V
CC
= 5.0 V
R1 = 0
Ω;
R2 = 1960
Ω
R1 = 2.2
Ω;
R2 = 1650
Ω
during shutdown; pin
SHDN = LOW (shutdown enabled)
[1]
[2]
[1]
[2]
[2]
[1]
[2]
[2]
Min
50
115
135
50
110
125
-
Typ
-
130
160
-
130
150
4
Max
200
145
185
170
150
175
6
Unit
mA
mA
mA
mA
mA
mA
μA
The supply current is adjustable; see
Section 8.1 “Supply current adjustment”.
See
Section 12 “Application information”.
8.1 Supply current adjustment
The supply current can be adjusted by changing the value of external ICQ resistor (R2);
(see
Figure 4).
BGA7124
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 September 2010
5 of 33
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