AD500-9 TO52S1
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency > 80 % at
λ
760 - 910 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
Parameters:
Active Area
Dark Current
1)
(M = 100)
Total Capacitance
1)
(M = 100)
Breakdown Voltage U
BR
(at I
D
= 2 µA)
Temperature Coefficient of U
BR
Spectral Responsivity
1)
(at 905 nm, M = 100)
Cut-off Frequency
(-3dB)
Rise Time
Optimum Gain
Max. Gain
“Excess Noise” factor
(M = 100)
“Excess Noise” index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
AD500-9 TO52S1
0.196 mm
2
Ø 500 µm
max. 5 nA
typ. 0.5 - 1 nA
typ. 1.2 pF
120 … 300 V
typ. > 200 V
typ. 1.55 V/K
min. 55 A/W
typ. 60 A/W
typ. 0.5 GHz
typ. 550 ps
50 - 60
> 200
Package (TO52S1):
CASE
4
3
1
45°
ANODE
∅
2.54
∅
5.4 ± 0.2
CATHODE
∅
4.7 ± 0.1
0.9 ± 0.3
∅
2.0 min.
3.6 ± 0.2
sensitive
surface
typ. 2.5
typ. 0.2
typ. 1 pA/Hz
1/2
typ. 2* 10
-14
W/Hz
1/2
-20 ... +70 °C
-60 ... +100 °C
2.7 ± 0.2
0.5 max.
0.4 max.
∅
0.45
Chip: AD500-9
diam. active area: 100 µm
1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(880 nm, 80 nm bandwith).
Increase the photo current up to 1 µA, (M = 100) by internal multiplication
due to an increasing bias voltage.
3
1
view without
window cap
4
www.silicon-sensor.com
Version: 05-04-29
Specification before: SSO-AD-500-9-TO52-S1
www.pacific-sensor.com
13 ± 1.0
0.35 ± 0.2
∅
3.0 ± 0.1
Spectral Responsivity at M = 1
series - 9
0,700
0,600
Sabs (A/W)
Spectral Responsivity at M = 100
series - 9
7 0 ,0 0
6 0 ,0 0
5 0 ,0 0
4 0 ,0 0
3 0 ,0 0
2 0 ,0 0
1 0 ,0 0
0 ,0 0
0,500
Sabs (A/W)
0,400
0,300
0,200
0,100
0,000
4 00
5 00
60 0
70 0
80 0
9 00
1 00 0
1 10 0
W av elength (nm)
400
500
600
700
800
900
1000
1100
W a v e le ng th (nm )
QE for M = 1
series - 9
100,0
90,0
80,0
70,0
60,0
QE
50,0
40,0
30,0
20,0
10,0
0,0
400
500
600
700
800
900
1000
1100
I
D
= f(U
R
/U
BR
)
AD500-9
10,000
W a v e le ngth (nm)
Gain = f(V
R
)
AD500-9
1000,0
1,000
100,0
Id [nA]
0,100
M
10,0
0,010
0,001
0,000
1,0
0,200
0,400
U
R
/U
BR
0,600
0,800
1,000
0
50
100
150
V
R
[ V]
200
250
300
Maximum Ratings:
max. electrical power dissipation
max. optical peak value, once
max. continous optical operation
( P
electr.
= P
opt.
* S
abs
* M * U
R
)
100 mW at 22°C
200 mW for 1 s
I
Ph
(DC)
≤
250 µA
≤
1 mA for signal 50 µs "on" / 1 ms "off"
Bias supply voltage
Current limiting resistor
Application Hints:
Current should be limited by a protecting resistor or current limiting - IC inside the
power supply.
Use of low noise read-out - IC.
For high gain applications bias voltage should be temperature compensated.
For low light level applications, blocking of ambient light should be used.
APD
min. 0,1 µF,
closest to APD
Diode, protective circuit
Handling Precautions:
Read-out circuit or
f.e. 50
Ω
Load resistance
Soldering temperature
260 °C for max. 10 s. The device must be protected against solder flux vapour!
min. Pin - length
2 mm
ESD - protection
Standard precautionary measures are sufficient.
Storage
Store devices in conductive foam.
Avoid skin contact with window!
Clean window with Ethyl alcohol if necessary.
Do not scratch or abrade window.
Germany
:
Silicon Sensor GmbH
Ostendstr. 1
12459 Berlin
Germany
Phone: +49 (0)30-63 99 23 10
Fax:
+49 (0)30-63 99 23 33
E-Mail:
sales@silicon-sensor.de
International Sales:
Silicon Sensor GmbH
U.K. Office
35 Orchard Close
Stanstead Abbotts, Ware
Hertfordshire SG 12 8 AH
Phone/Fax: +44 (0)1920/87 20 90
E-Mail:
pnsilsensuk@btconnect.com
p.nash@silicon-sensor.com
U.S.A. :
Pacific Silicon Sensor, Inc.
5700 Corsa Avenue #105
Westlake Village
CA 91362 USA
Phone: +1-818-706-3400
Fax:
+1-818-889-7053
E-Mail: :
sales@pacific-sensor.com
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