AAT7551
20V P-Channel Power MOSFET
General Description
The AAT7551 is a dual low threshold P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small outline, J-lead package, performance supe-
rior to that normally found in a TSOP-6 footprint
has been squeezed into the footprint of an
SC70JW-8 package.
Features
•
•
•
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max):
-2.7A @ 25°C
Low On-Resistance:
— 100mΩ @ V
GS
= -4.5V
— 175mΩ @ V
GS
= -2.5V
Dual SC70JW-8 Package
Top View
D1
8
D1
7
D2
6
D2
5
Applications
•
•
•
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Symbol
V
DS
V
GS
I
D
I
DM
I
S
T
J
T
STG
1
S1
2
G1
3
S2
4
G2
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
= 150°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
Operating Junction Temperature Range
Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
Value
-20
±12
±2.7
±2.2
±8
-0.6
-55 to 150
-55 to 150
Units
V
A
°C
°C
Thermal Characteristics
1
Symbol
R
θJA
R
θJA2
R
θJF
P
D
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
T
A
= 25°C
T
A
= 70°C
Typ
132
83
60
Max
165
104
72
1.2
0.75
Units
°C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design;
however, R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
7551.2005.04.1.0
1
AAT7551
20V P-Channel Power MOSFET
Electrical Characteristics
T
J
= 25°C, unless otherwise noted.
Symbol Description
DC Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
R
DS(ON)
Drain-Source On-Resistance
1
Conditions
V
GS
= 0V, I
D
= -250µA
Min
-20
Typ
Max
Units
V
V
GS
= -4.5V, I
D
= -2.7A
V
GS
= -2.5V, I
D
= -2.0A
1
I
D(ON)
On-State Drain Current
V
GS
= -4.5V, V
DS
= -5V (pulsed)
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= -250µA
I
GSS
Gate-Body Leakage Current
V
GS
= ±12V, V
DS
= 0V
V = 0V, V
DS
= -20V
I
DSS
Drain Source Leakage Current
GS
V
GS
= 0V, V
DS
= -16V, T
J
= 70°C
2
g
fs
Forward Transconductance
1
V
DS
= -5V, I
D
= -2.7A
2
Dynamic Characteristics
Q
G
Total Gate Charge
V
DS
= -10V, R
D
= 3.7Ω, V
GS
= -4.5V
Q
GS
Gate-Source Charge
V
DS
= -10V, R
D
= 3.7Ω, V
GS
= -4.5V
Q
GD
Gate-Drain Charge
V
DS
= -10V, R
D
= 3.7Ω, V
GS
= -4.5V
t
D(ON)
Turn-On Delay
V
DS
= -10V, R
D
= 3.7Ω, V
GS
= -4.5V, R
G
= 6Ω
t
R
Turn-On Rise Time
V
DS
= -10V, R
D
= 3.7Ω, V
GS
= -4.5V, R
G
= 6Ω
t
D(OFF)
Turn-Off Delay
V
DS
= -10V, R
D
= 3.7Ω, V
GS
= -4.5V, R
G
= 6Ω
t
F
Turn-Off Fall Time
V
DS
= -10V, R
D
= 3.7Ω, V
GS
= -4.5V, R
G
= 6Ω
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward
V
GS
= 0, I
S
= -2.7A
1
Voltage
I
S
Continuous Diode Current
3
80
140
-8
-0.6
100
175
mΩ
A
V
nA
µA
S
±100
-1
-5
4
5.9
1
2
22
10
20
40
-1.3
-0.6
nC
ns
V
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design;
however, R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
7551.2005.04.1.0
AAT7551
20V P-Channel Power MOSFET
Typical Characteristics
T
J
= 25ºC, unless otherwise noted.
Output Characteristics
8
Transfer Characteristics
8
5V
4.5V
4V
3.5V
3V
2.5V
I
D
(A)
6
V
D
=V
G
25°C
125°C
-55°C
6
I
DS
(A)
4
4
2V
2
2
1.5V
0
0
0.5
1
1.5
2
2.5
3
0
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
On-Resistance vs. Drain Current
0.3
0.25
On-Resistance vs. Gate-to-Source Voltage
0.4
I
D
= 2.7A
0.3
R
DS(ON)
(Ω)
0.2
V
GS
= 2.5 V
0.15
0.1
0.05
0
0
2
4
6
8
R
DS(ON)
(Ω)
0.2
0.1
V
GS
= 4.5 V
0
0
1
2
3
4
5
I
D
(A)
V
GS
(V)
On-Resistance vs. Junction Temperature
1.6
1.5
0.4
Threshold Voltage
I
D
= 250µA
Normalized R
DS(ON)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
GS(th)
Variance (V)
V
GS
= 4.5V
I
D
= 2.7A
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
(°C)
T
J
(°C)
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AAT7551
20V P-Channel Power MOSFET
Typical Characteristics
T
J
= 25ºC, unless otherwise noted.
Gate Charge
5
4
3
2
1
0
0
1
2
3
4
5
6
Source-Drain Diode Forward Voltage
100
V
D
= 10V
I
D
= 2.7A
10
V
GS
(V)
I
S
(A)
1
T
J
= 150°C
0.1
0
0 .2
0.4
0 .6
0.8
T
J
= 25°C
1
1.2
Q
G
, Charge (nC)
V
SD
(V)
Capacitance
600
Single Pulse Power, Junction to Ambient
50
45
Capacitance (pF)
C
iss
400
40
35
Power (W)
30
25
20
15
10
5
0
0.0001
200
C
rss
C
oss
0
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
V
DS
(V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective
Transient Thermal Impedance
10
1
.5
.2
0.1
.1
.02
.01
0.01
Single Pulse
0.001
0.01
0.1
1
10
100
1000
0.0001
Time (s)
4
7551.2005.04.1.0
AAT7551
20V P-Channel Power MOSFET
Ordering Information
Package
SC70JW-8
Marking
1
KDXYY
Part Number (Tape and Reel)
2
AAT7551IJS-T1
Package Information
SC70JW-8
0.50 BSC 0.50 BSC 0.50 BSC
1.75
±
0.10
0.225
±
0.075
2.00
±
0.20
2.20
±
0.20
0.048REF
0.15
±
0.05
0.85
±
0.15
1.10 MAX
0.100
7°
±
3°
0.45
±
0.10
2.10
±
0.30
4°
±
4°
All dimensions in millimeters.
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in
BOLD.
0.05
±
0.05
7551.2005.04.1.0
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