2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,
QUALIFIED TO MIL-PRF-19500/557
100 V, 200 V, 400 V & 500 V, N-Channel,
Enhancement Mode MOSFET Power Transistor
FEATURES
• Low R
DS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/557
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. I i i e l y s i e f r
t s dal utd o
Military requirements where small size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ T
C
= 25
°
C
PART NUMBER
2N6796
2N6798
2N6800
2N6802
V
DS,
Vo t
ls
100
200
400
500
R
DS(on)
.8
1
.0
4
1.00
1.50
I
,
A m p s
D
80
.
55
.
30
.
25
.
S C H E M ATIC
MECHANICAL OUTLINE
Pin Connection
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
(Case)
7 03 R0
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6796
80
.
50
.
32
25
02
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
43
.
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
100
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 5 0 A
3
0 ,
.
V
G S
= 1 V I
D
= 8 0 A
3
0 ,
.
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 8 V V
G S
= 0V
0 ,
V
D S
= 8 V V
G S
= 0 , T
J
= 125°C
0 ,
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 8A
0 ,
V
D S
= 50 V
See note 4
V
D D
= 3 V I
D
= 5 0 A R
G
=7.5
0 ,
. ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
.8
1
.195
40
.
25
250
100
-100
28.5
63
.
16.6
30
75
40
45
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
3
Typ.
-
-
-
-
-
-
Max.
15
.
300
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 8.0A
3
,VG S = 0 V
3
5C
T
J
= 2 ° , I
F
= 8 0 A id < 100 A/µs
5C
. ,d/t
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
50
.
-
-
-
175
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
5 , trig
C
0
.
@V
D D
= 2 V S a t n T
J
= 25° , L = 1 0 µH + 10%, R
G
= 25 , Peak I
L
= 8 0 A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6798
55
.
35
.
22
25
02
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
20
.
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
200
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 3 5 A
3
0 ,
.
V
G S
= 1 V I
D
= 5 5 A
3
0 ,
.
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 160 V, V
G S
= 0V
V
D S
= 160 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 5 5 A
0 ,
.
V
D S
= 100 V
See note 4
V
D D
= 7 V I
D
= 3 5 A R
G
=7.5
7 ,
. ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
.0
4
.2
4
40
.
25
250
100
-100
42.1
53
.
28.1
30
50
50
40
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
3
Typ.
-
-
-
-
-
-
Max.
14
.
500
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 5 5 A
3
,VG S = 0 V
3
5C
.
T
J
= 2 ° , I
F
= 5 5 A id < 100 A/µs
5C
. ,d/t
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
50
.
-
-
-
175
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0 , trig
C
0
.
@V
D D
= 5 V S a t n T
J
= 25° , L = 1 0 µH + 10%, R
G
= 25 , Peak I
L
= 5 5 A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6800
30
.
20
.
14
25
02
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
05
.1
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
400
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 2 0 A
3
0 ,
.
V
G S
= 1 V I
D
= 3 0 A
3
0 ,
.
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 320 V, V
G S
= 0V
V
D S
= 320 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 3.0A
0 ,
V
D S
= 200 V
See note 4
V
D D
= 1 6 V I
D
= 2 A R
G
=7.5
7 ,
,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
.
1.10
40
.
25
250
100
-100
33
58
.
16.6
30
35
55
35
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
14
.
700
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 3 A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 3 0 A id
5C
. ,d/t<100A/µs
3
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
50
.
-
-
-
175
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0 , trig
C
0
.
@V
D D
= 5 V S a t n T
J
= 25° , L = 1 0 µH + 10%, R
G
= 25 , Peak I
L
= 3 0 A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N6802
25
.
15
.
11
25
0.20
± 20
2
Units
A
A
A
W
W/°C
V
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
.5
3
4
-55 to 150
300 (.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
500
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 1 5 A
3
0 ,
.
V
G S
= 1 V I
D
= 2 5 A
3
0 ,
.
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 400 V, V
G S
= 0V
V
D S
= 400 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 2 5 A
0 ,
.
V
D S
= 250 V
See note 4
V
D D
= 2 5 V I
D
= 1 5 A R
G
= 7.5
2 ,
. ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
.
16
.
40
.
25
250
100
-100
29.5
45
.
28.1
30
30
55
30
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
Junction-to-Case
R
thJC
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
14
.
900
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 2 5 A
3
,VG S = 0 V
5C
.
T
J
= 2 ° , I
F
= 2 5 A id
5C
. ,d/t<100A/µs
3
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
50
.
-
-
-
175
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0 , trig
C
0
.
@V
D D
= 5 V S a t n T
J
= 25° , L = 1 0 uH + 10%, R
G
= 25 , Peak I
L
= 2 5 A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/557
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