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IS62WV25616ALL-70BI

Description
256K X 16 STANDARD SRAM, 55 ns, PDSO44
Categorystorage   
File Size391KB,14 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
Download Datasheet Parametric Compare View All

IS62WV25616ALL-70BI Overview

256K X 16 STANDARD SRAM, 55 ns, PDSO44

IS62WV25616ALL-70BI Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals44
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2.5 V
maximum access time55 ns
Processing package descriptionLead FREE, Plastic, TSOP2-44
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRectangle
Package SizeSMALL OUTLINE, THIN PROFILE
surface mountYes
Terminal formGULL WING
Terminal spacing0.8000 mm
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width16
organize256K × 16
storage density4.19E6 deg
operating modeASYNCHRONOUS
Number of digits262144 words
Number of digits256K
Memory IC typeStandard memory
serial parallelparallel
IS62WV25616ALL
IS62WV25616BLL
256K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC SRAM
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation
36 mW (typical) operating
9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V--2.2V V
dd
(IS62WV25616ALL)
2.5V--3.6V V
dd
(IS62WV25616BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
AUGUST 2014
speed, low power, 4M bit SRAMs organized as 256K words
by 16 bits. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When
CS1 is HIGH (deselected) or when CS1
is
LOW
and
both
LB
and
UB are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable (WE)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62WV25616ALL/IS62WV25616BLL are packaged
in the JEDEC standard 44-Pin TSOP (TYPE II)
and 48-pin
mini BGA (6mmx8mm).
DESCRIPTION
The
ISSI
IS62WV25616ALL/IS62WV25616BLL are high-
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
08/25/2014
1

IS62WV25616ALL-70BI Related Products

IS62WV25616ALL-70BI IS62WV25616ALL-70T IS62WV25616ALL IS62WV25616ALL-70TI IS62WV25616BLL IS62WV25616BLL-70T IS62WV25616BLL-55T
Description 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44 256K X 16 STANDARD SRAM, 55 ns, PDSO44
Number of functions 1 1 1 1 1 1 1
Number of terminals 44 44 44 44 44 44 44
Maximum operating temperature 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 70 °C 85 Cel
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel - -40 Cel
surface mount Yes Yes Yes Yes Yes YES Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location pair pair pair pair pair DUAL pair
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
memory width 16 16 16 16 16 16 16
organize 256K × 16 256K × 16 256K × 16 256K × 16 256K × 16 256KX16 256K × 16
Maximum supply/operating voltage 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V
Minimum supply/operating voltage 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V - 2.5 V
maximum access time 55 ns 55 ns 55 ns 55 ns 55 ns - 55 ns
Processing package description Lead FREE, Plastic, TSOP2-44 Lead FREE, Plastic, TSOP2-44 Lead FREE, Plastic, TSOP2-44 Lead FREE, Plastic, TSOP2-44 Lead FREE, Plastic, TSOP2-44 - Lead FREE, Plastic, TSOP2-44
Lead-free Yes Yes Yes Yes Yes - Yes
EU RoHS regulations Yes Yes Yes Yes Yes - Yes
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE - ACTIVE
Craftsmanship CMOS CMOS CMOS CMOS CMOS - CMOS
packaging shape Rectangle Rectangle Rectangle Rectangle Rectangle - Rectangle
Package Size SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE
Terminal spacing 0.8000 mm 0.8000 mm 0.8000 mm 0.8000 mm 0.8000 mm - 0.8000 mm
terminal coating MATTE Tin MATTE Tin MATTE Tin MATTE Tin MATTE Tin - MATTE Tin
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy
storage density 4.19E6 deg 4.19E6 deg 4.19E6 deg 4.19E6 deg 4.19E6 deg - 4.19E6 deg
operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS
Number of digits 256K 256K 256K 256K 256K - 256K
Memory IC type Standard memory Standard memory Standard memory Standard memory Standard memory - Standard memory
serial parallel parallel parallel parallel parallel parallel - parallel
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