CHENMKO ENTERPRISE CO.,LTD
AXIAL LEAD
SILICON PLANAR POWER ZENER DIODES
VOLTAGE RANGE 2.4V TO 200V
1N5221PT
THRU
1N5281PT
FEATURE
*
*
*
*
*
High temperature soldering type.
ESD rating of class 3(>16 kV) per human body model.
Silicon planar zener diodes.
Silcon-oxide passivated junction.
Low temperature coefficient voltage
.022 (0.56)
DIA.
.018 (0.46)
1.02 (26.0)
MIN.
DO-35
MECHANICAL
*
*
*
*
*
Axial-lead hermetically sealed package.
DO-35 Packaging.
Cathode indicated by polarity band.
Mounting position: Any.
Weight: Approx. 0.13g.
.165 (4.2)
MAX.
.079 (2.0)
MAX.
1.02 (26.0)
MIN.
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
Dimensions in inches and (millimeters)
DO-35
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation @T
L
=75
o
C,Lead Length=3/8"
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
P
D
T
J
T
STG
VALUE
-
500
+200
-65 to +200
UNITS
-
mW
o
C
C
o
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Max. Instantaneous Forward Voltage at I
F=
100mA
SYMBOL
R
JA
MIN.
-
-
TYP.
-
-
MAX.
300
1.10
UNITS
o
C/W
V
F
Volts
2001-6
NOTES : 1. The JEDEC type numbers listd have a standaerd tolerance on the normal zener voltage of +10%, Suffix A=+5%.
2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10%
of DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at two points to insure a sharp knee
on the breakdown curve to eliminate unstable units.
3. Valid provided that electrodes at distance of 10mm from case are kept ambient temperature.
4. Measured under thermal equilibrium and DC test conditions.
5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave
or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration.
Embedded System
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