GWM 160-0055P3
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G
S
G3
S3
G5
S5
L
L2
L3
G4
S4
G6
S6
L-
V
DSS
= 55 V
= 160 A
I
D25
R
DSon typ.
= 2.0 mW
Bent leads
Surface Mount
Device
G2
S2
Straight leads
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
Symbol
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
Conditions
Conditions
T
J
= 25°C to 50°C
Maximum Ratings
55
V
±
20
60
20
35
90
V
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 3 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
(T
J
= 25°C, unless otherwise specified)
R
DSon 1)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
)
on chip level at
V
GS
= 0 V; I
D
= 00 A
V
DS
= 20 V; I
D
= mA
V
DS
= V
DSS
; V
GS
= 0 V
as
T
J
= 25°C
T
J
= 25°C
2
T
J
= 25°C
T
J
= 25°C
e-
min.
typ.
2.0
3.4
max.
3.0
4
0.
0.2
90
8
25
95
05
500
0
0.2
0.52
0.02
0.9
.2
V
GS
=
±
20 V; V
DS
= 0 V
Ph
V
GS
= 0 V; V
DS
= 2 V; I
D
= 60 A
inductive load
V
GS
= 0 V; V
DS
= 24 V
I
D
= 00 A; R
G
= 39
Ω;
T
J
= 25°C
with heat transfer paste
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
ou
t
A
A
A
A
Characteristic Values
mW
mW
V
µA
mA
µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
-6
20070322
GWM 160-0055P3
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
V
SD
t
rr
Q
RM
I
RM
(diode) I
F
= 00 A; V
GS
= 0 V
I
F
= 00 A; -di
F
/dt = 800 A/µs; V
R
= 24 V
typ.
0.9
60
0,65
20
max.
.2
V
ns
µC
A
Component
Symbol
I
RMS
T
J
T
stg
V
ISOL
F
C
Symbol
I
ISOL
< mA, 50/60 Hz, f = minute
mounting force with clip
Conditions
Conditions
per pin in main current paths (P+, N-, L, L2, L3)
may be additionally limited by external connections
Maximum Ratings
300
-40...+75
-55...+25
000
50 - 250
A
°C
°C
V~
N
min.
R
pin to chip 1)
C
P
Weight
)
coupling capacity between shorted
pins and mounting tab in the case
e-
25
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
Ph
as
ou
t
Characteristic Values
typ.
0.6
max.
mW
60
pF
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-6
20070322
GWM 160-0055P3
S
traight
L
eads
GWM 60-0055P3-SL
B
ent
L
eads
GWM 60-0055P3-BL
ou
t
Leads
Ordering Code &
Packing Unit Marking
Part Marking
Code
Key
e-
SMD
Bent
Straight GWM 60-0055P3 - SL
GWM 60-0055P3 502 829
S
urface
M
ount
D
evice
GWM 60-0055P3-SMD
GWM 60-0055P3 - SMD GWM 60-0055P3 502 836
GWM 60-0055P3 - BL
GWM 60-0055P3
contact
factory
Ph
as
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-6
20070322
GWM 160-0055P3
1.2
I
DSS
= 0.25 mA
350
V
DS
= 24 V
300
250
1.1
V
DSS
[V] normalized
I
D
- [A]
1.0
0.9
0.8
0.7
-25
200
150
100
50
0
TJ = 125°C
TJ = 25°C
0
25
50
75
100
125
150
0
2
4
6
8
T
J
[°C]
Fig. Drain source breakdown voltage V
DSS
vs. junction temperature T
J
V
GS
[V]
Fig. 2 Typical transfer characteristic
ou
t
300
250
200
150
100
50
0
V
GS
=
20 V
15 V
350
300
250
V
GS
= 20 V, 15 V
10 V
7V
350
T
J
= 25°C
10 V
TJ = 125°C
7V
6.5 V
6V
5.5 V
5V
6.5 V
I
D
[A]
150
100
50
0
6V
5.5 V
5V
as
e-
I
D
[A]
200
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
DS
[V]
V
DS
[V]
Fig. 4 Typical output characteristic
Fig. 3 Typical output characteristic
Ph
2.5
2.0
RDS(on) normalized
V
GS
= 10 V
I
D
= 160 A
6.0
3.0
2.5
2.0
1.5
5V
5.5 V
6V
6.5 V
T
J
= 125°C
7V
1.5
R
DS(on)
3.6
R
DS(on)
normalized
1.0
0.5
0.0
-25
2.4
R
DS(ON)
- normalized
4.8
RDS(on) [m ]
V
GS
=
1.2
1.0
0.5
10 V
15 V
20 V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
T
J
[°C]
Fig. 5 Drain source on-state resistance R
DS(on)
versus junction temperature T
J
IXYS reserves the right to change limits, test conditions and dimensions.
I
D
[A]
20070322
Fig. 6 Drain source on-state
resistance R
DS(on)
versus I
D
© 2006 IXYS All rights reserved
4-6
GWM 160-0055P3
14
12
10
VGS [V]
200
I
D
= 160 A
T
J
= 25°C
180
160
140
V
DS
= 12 V
8
6
4
2
0
I
D
- [A]
V
DS
= 40 V
0
20
40
60
80
100
120
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Q
G
[nC]
Fig.7 Gate charge characteristic
T
C
[°C]
Fig. 8 Drain current I
D
vs. case temperature T
C
0.20
0.16
Eon, E
rec(off)
[mJ]
V
DS
= 24 V
V
GS
= +10/0 V
R
G
= 39
T
J
= 125°C
t
r
200
160
120
t
d(on)
t [ns]
1.0
1000
V
DS
= 24 V
V
GS
= +10/0 V
R
G
= 39
T
J
= 125°C
t [ns]
20070322
ou
t
0.8
0.6
0.4
0.2
0.0
Eoff [mJ]
E
off
800
600
t
d(off)
0.12
0.08
0.04
E
on
E
rec(off)
80
40
0
400
200
e-
t
f
0.00
0
20
40
60
0
as
350
280
210
t [ns]
80 100 120 140 160 180
0
20
40
60
80 100 120 140 160 180
I
D
[A]
I
D
[A]
Fig. 0 Typ. turn-off energy & switching times
vs. collector current, inductive switching
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
Ph
0.75
0.60
Eon, E
rec(off)
[mJ]
2.0
1.8
1.6
1.4
Eoff [mJ]
V
DS
= 24 V
V
GS
= +10/0 V
I
D
= 160 A
T
J
= 125°C
t
d(off)
1600
1440
1280
1120
960
800
E
off
t [ns]
V
DS
= 24 V
V
GS
= +10/0 V
I
D
= 160 A
T
J
= 125°C
t
r
t
d(on)
0.45
0.30
0.15
E
on
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
140
70
E
rec(off)
640
480
t
f
320
160
0
0.00
0
0
20
40
60
80
100
120
100
120
R
G
[ ]
Fig. Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 2
R
G
[ ]
Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
5-6
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