MSB92T1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC−59 package
which is designed for low power surface mount applications.
Features
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COLLECTOR
3
•
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
−300
−300
−5.0
150
Unit
Vdc
Vdc
Vdc
mAdc
SC−59
CASE 318D
STYLE 1
J2D MG
G
1
BASE
2
EMITTER
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
−55X+
150
Unit
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
J2D= Device Marking Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MSB92T1G
Package
SC−59
(Pb−Free)
Shipping
†
3000/T
ape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 1
1
Publication Order Number:
MSB92T1G/D
MSB92T1G
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector-Base Breakdown Voltage
(I
C
=
−100
mAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
=
−100
mAdc,
I
E
= 0)
Collector-Base Cutoff Current
(V
CB
=
−200
Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
=
−3.0
Vdc, I
B
= 0)
DC Current Gain (Note 2)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc)
(V
CE
=
−10
Vdc, I
C
=
−10
mAdc)
(V
CE
=
−10
Vdc, I
C
=
−30
mAdc)
Collector-Emitter Saturation Voltage
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
Base−Emitter Saturation Voltage
(I
C
=
−20
mAdc, I
B
=
−2.0
mAdc)
SMALL SIGNAL CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 20 MHz)
Collector−Base Capacitance
(V
CB
=
−20
Vdc, I
E
= 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
f
T
C
cb
50
−
−
6.0
MHz
pF
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
−300
−300
−5.0
−
−
Max
−
−
−
−0.25
−0.1
Unit
Vdc
Vdc
Vdc
mA
mA
−
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
25
40
25
−
−
−
−
−
−0.5
−0.9
Vdc
Vdc
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2
MSB92T1G
PACKAGE DIMENSIONS
SC*
59
04
CASE 318D*
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
H
E
3
1
2
E
b
e
C
L
A
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb
*
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf . SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product
could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall
indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws
and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
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Email:
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USA/Canada
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