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IRHNA8064

Description
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
CategoryDiscrete semiconductor    The transistor   
File Size117KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHNA8064 Overview

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

IRHNA8064 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)300 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 91737A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
Product Summary
Part Number
IRHNA7064
IRHNA3064
IRHNA4064
IRHNA8064
Radiation Level R
DS(on)
100K Rads (Si) 0.015Ω
300K Rads (Si) 0.015Ω
600K Rads (Si) 0.015Ω
1000K Rads (Si) 0.015Ω
I
D
75*A
75*A
75*A
75*A
IRHNB7064
60V, N-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
®
SMD-3
International Rectifier’s RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
*Current is limited by pin diameter
75*
56
300
300
2.4
±20
500
75*
30
2.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5 sec.)
3.5 (Typical )
g
www.irf.com
1
12/12/01

IRHNA8064 Related Products

IRHNA8064 IRHNA4064 IRHNA3064 IRHNA7064 IRHNB7064
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Reach Compliance Code unknow unknow compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V
Maximum drain current (ID) 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.018 Ω 0.018 Ω 0.018 Ω 0.018 Ω 0.018 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 300 A 300 A 300 A 300 A 356 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 -
Contacts 3 3 3 3 -
Base Number Matches - 1 - 1 1
Is it Rohs certified? - - incompatible incompatible incompatible
Maximum drain current (Abs) (ID) - - 75 A 75 A 75 A
JESD-609 code - - e0 e0 e0
Maximum power dissipation(Abs) - - 300 W 300 W 300 W
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD
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