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BSZ900N15NS3GATMA1

Description
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
CategoryDiscrete semiconductor    The transistor   
File Size319KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ900N15NS3GATMA1 Overview

MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3

BSZ900N15NS3GATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, S-PDSO-N5
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time16 weeks
Samacsys DescriptionBSZ900N15NS3GATMA1 N-Channel MOSFET, 13 A, 150 V OptiMOS 3, 8-Pin TSDSON Infineon
Avalanche Energy Efficiency Rating (Eas)30 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)38 W
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
s
BSZ900N15NS3 G
OptiMOS
TM
3 Power-Transistor
Package
Marking
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
150
90
13
V
A
PG-TSDSON-8
Type
BSZ900N15NS3 G
Package
PG-TSDSON-8
Marking
900N15N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
13
8
52
30
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=10 A,
R
GS
=25
Ω
mJ
V
W
°C
T
C
=25 °C
38
-55 ... 150
55/150/56
J-STD20 and JESD22
Rev. 2.1
page 1
2011-05-16

BSZ900N15NS3GATMA1 Related Products

BSZ900N15NS3GATMA1 BSZ900N15NS3 G
Description MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
Maker Infineon Infineon
Configuration SINGLE WITH BUILT-IN DIODE Single
Maximum operating temperature 150 °C + 150 C
Minimum operating temperature -55 °C - 55 C
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