The DG2714 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed
(t
ON
: 28 ns, t
OFF
: 12 ns), low on-resistance (r
DS(on)
: 0.85
Ω)
and small physical size (SC70), the DG2714 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG2714 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2714.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
FEATURES
•
•
•
•
•
•
Low Voltage Operation (1.6 V to 3.6 V)
Low On-Resistance - r
DS(on)
: 0.85
Ω
Typ.
Fast Switching - t
ON
: 28 ns, t
OFF
: 12 ns
Low Leakage
TTL/CMOS Compatible
6-Pin SC-70 Package
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
•
•
•
•
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
•
•
•
•
•
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
SC-70
IN
V+
GND
1
2
3
Top View
Device Marking:
E8xx
6
5
4
NO (Source
1
)
COM
NC (Source
2
)
Logic
0
1
NC
ON
OFF
NO
OFF
ON
ORDERING INFORMATION
Temp Range
- 40 to 85 °C
Package
SC70-6
Part Number
DG2714DL-T1
DG2714DL-T1-E3
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72308
S-70852-Rev. B, 30-Apr-07
www.vishay.com
1
DG2714
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Referenced V+ to GND
IN, COM, NC, NO
a
Continuous Current (NO, NC and COM Pins)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
6-Pin SO70
c
Limit
- 0.3 to + 4
- 0.3 to (V+ + 0.3)
± 200
± 300
- 65 to 150
250
Unit
V
mA
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 1.8 V)
Test Conditions
Otherwise Unless Specified
V+ = 1.8 V, ± 10 %, V
IN
= 0.4 or 1.1 V
e
Limits
- 40 to 85 °C
Temp
a
Min
b
Typ
c
Max
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Flatness
d
r
ON
Match
d
Symbol
V
NO
, V
NC
V
COM
r
ON
r
ON
Flatness
Δr
ON
I
NO(off)
I
NC(off)
I
COM(off)
Full
V+ = 1.8 V, V
COM
= 0.2 V/0.9 V
I
NO
, I
NC
= 10 mA
V+ = 1.8 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
Full
d
Room
Room
V+ = 2.2 V
V
NO
, V
NC
= 0.2 V/2.0 V, V
COM
= 2.0 V/0.2 V
Room
Full
d
Room
Full
d
Room
Full
d
Full
Full
Full
V
IN
= 0 or V+
Full
Room
Full
d
Room
Full
d
Room
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Ω,
Figure 3
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
Room
0
1.8
V+
3.0
4.5
2
0.06
V
Ω
Switch Off Leakage Current
f
-1
- 10
-1
- 10
-1
- 10
1.1
1
10
1
10
1
10
nA
Channel-On Leakage Current
f
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
d
Input Current
f
Dynamic Characteristics
Turn-On Time
d
Turn-Off Time
d
I
COM(on)
V+ = 2.2 V, V
NO
, V
NC
= V
COM
= 0.2 V/2.0 V
V
INH
V
INL
C
in
I
INL
or I
INH
0.4
3.5
-1
55
19
3
13
- 64
- 64
32
78
1
75
89
39
40
V
pF
µA
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
ON
V
NO
or V
NC
= 1.5 V, R
L
= 300
Ω,
C
L
= 35 pF
Figures 1 and 2
ns
Break-Before-Make Time
d
Charge Injection
d
Off-Isolation
d
Crosstalk
d
NO, NC Off Capacitance
d
Channel-On
Capacitance
d
pC
dB
V
IN
= 0 or V+, f = 1 MHz
pF
www.vishay.com
2
Document Number: 72308
S-70852-Rev. B, 30-Apr-07
DG2714
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.5 V
e
Limits
- 40 to 85 °C
Temp
a
Min
b
Typ
c
Max
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
r
ON
Flatness
r
ON
MatchFlat
Symbol
V
NO
, V
NC
V
COM
r
ON
r
ON
Flatness
Δr
ON
I
NO(off)
I
NC(off)
I
COM(off)
Full
V+ = 2.7 V, V
COM
= 0.2 V/1.5 V
I
NO
, I
NC
= 100 mA
V+ = 2.7 V, V
COM
= 0 to V+, I
NO
, I
NC
= 100 mA
Room
Full
Room
Room
V+ = 3.3 V
V
NO
, V
NC
= 0.3 V/3 V, V
COM
= 3 V/10.3 V
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 or V+
Full
Room
Full
Room
Full
Room
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Ω,
Figure 3
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
Room
0
0.85
V+
1.2
1.3
0.2
0.06
V
Ω
Switch Off Leakage Current
-1
- 10
-1
- 10
-1
- 10
1.5
1
10
1
10
1
10
nA
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
d
Input Current
f
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
NO, NC Off Capacitance
d
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
d
I
COM(on)
V
INH
V
INL
C
in
I
INL
or I
INH
0.5
3.3
-1
28
12
1
9
- 64
- 64
30
77
1.5
3.6
0.01
1.0
1
51
55
33
34
V
pF
µA
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
ON
V+
I+
V+ = 3.6 V, V
IN
= 0 or V+
V
NO
or V
NC
= 2.0 V, R
L
= 300
Ω,
C
L
= 35 pF
Figures 1 and 2
ns
pC
dB
V
IN
= 0 or V+, f = 1 MHz
pF
V
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 3 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72308
S-70852-Rev. B, 30-Apr-07
www.vishay.com
3
DG2714
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.5
T = 25
°C
I
S
= 10 mA
r
ON
- On-Resistance (Ω)
r
ON
- On-Resistance (Ω)
2.0
V+ = 1.8 V
1.5
V+ = 2 V
V+ = 2.5 V
V+ = 3 V
V+ = 3 .3 V
V+ = 3.6 V
2.0
2.5
I
S
= 100 mA
V+ = 1.8 V
85
°C
25
°C
- 40
°C
1.5
V+ = 3.0 V
1.0
85
°C
25
°C
-40
°C
0.5
- 40
°C
25
°C
V+ = 2.9 V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
85
°C
1.0
0.5
V
COM
- Analog Voltage (V)
V
COM
- Analog Voltage (V)
r
ON
vs. V
COM
and Single Supply Voltage
100 m
V+ = 3 V
V
IN
= 0 V
I+ - Supply Current (nA)
1000
I+ - Supply Current (A)
10 m
1m
100 µ
10 µ
1µ
100 n
10 n
1
- 60
1n
- 40
- 20
0
20
40
60
80
100
10
r
ON
vs. Analog Voltage and Temperature
10000
V+ = 3 V
100
10
100
1K
10 K
100 K
1M
10 M
Temperature (°C)
Input Switching Frequency (Hz)
Supply Current vs. Temperature
1000
V+ = 3.3 V
300
250
200
150
Leakage Current (pA)
Leakage Current (pA)
100
100
50
0
- 50
- 100
- 150
I
NO(off)
/I
NC(off)
- 200
- 250
1
- 60
- 40
- 20
0
20
40
60
80
100
Supply Current vs. Input Switching Frequency
V+ = 3.3 V
T = 25
°C
I
COM(off)
I
COM(on)
10
I
COM(off)
I
COM(on)
I
NO(off)
/I
NC(off)
- 300
0.00
0.55
1.10
1.65
2.20
2.75
3.30
Temperature (°C)
V
COM
, V
NO
, V
NC
- Analog Voltage
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
www.vishay.com
4
Document Number: 72308
S-70852-Rev. B, 30-Apr-07
DG2714
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
t
OFF
- Switching Time (ns)
45
40
35
30
25
20
15
10
5
0
- 60
t
OFF
V+ = 2 V
t
OFF
V+ = 3 V
t
OFF
V+ = 3.6 V
t
ON
V+ = 3 V
t
ON
V+ = 3.6 V
t
ON
V+ = 2 V
Loss, OIRR, X
TALK
(dB)
10
0
- 10
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
100 K
V+ = 3 V
R
L
= 50
Ω
LOSS
X
TALK
OIRR
t
ON
,
- 40
- 20
0
20
40
60
80
100
1M
10 M
Frequency (Hz)
100 M
1G
Temperature (°C)
Switching Time vs. Temperature and Supply Voltage
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
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