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BDX34B

Description
Darlington Transistors 10A 80V Bipolar
CategoryDiscrete semiconductor    The transistor   
File Size131KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BDX34B Overview

Darlington Transistors 10A 80V Bipolar

BDX34B Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging code221A-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)70 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 2500 (typ.) at I
C
= 4.0
Collector−Emitter Sustaining Voltage at 100 mAdc
V
CEO(sus)
= 80 Vdc (min)
BDX33B, BDX334B
= 100 Vdc (min)
BDX33C, BDX334C
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 2.5 Vdc (max) at I
C
= 3.0 Adc
BDX33B, 33C/34B, 34C
Monolithic Construction with Build−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Symbol
V
CEO
Value
80
100
80
100
5.0
10
15
0.25
70
0.56
−65
to +150
Unit
Vdc
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
1
2
TO−220AB
CASE 221A−09
STYLE 1
3
V
CB
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Continuous
Peak
V
EB
I
C
I
B
P
D
T
J
, T
stg
Vdc
Adc
Adc
W
W/°C
°C
MARKING DIAGRAM
BDX3xyG
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.78
Unit
°C/W
A
Y
WW
G
=
=
=
=
BDX3xy =
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 13
1
Publication Order Number:
BDX33B/D

BDX34B Related Products

BDX34B BDX33B
Description Darlington Transistors 10A 80V Bipolar Darlington Transistors 10A 80V Bipolar
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Contains lead Contains lead
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 CASE 221A-09, 3 PIN
Contacts 3 3
Manufacturer packaging code 221A-09 221A-09
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Factory Lead Time 1 week 1 week
Other features LEADFORM OPTIONS ARE AVAILABLE LEADFORM OPTIONS ARE AVAILABLE
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A
Collector-emitter maximum voltage 80 V 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 750 750
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 240 240
Polarity/channel type PNP NPN
Maximum power dissipation(Abs) 70 W 70 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
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