IRG4BC30FD-SPbF
Fast CoPack IGBT
V
CES
= 600V
G
E
PD - 95970A
INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
C
Features
Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
IGBT co-packaged with HEXFRED
TM
ultrafast, ultra-soft
recovery anti-parallel diodes for use in bridge configurations.
Lead-Free
V
CE(on) typ.
=
1.59V
@V
GE
= 15V, I
C
= 17A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specific application conditions.
HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no
snubbing.
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's.
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
31
17
124
124
12
120
±20
100
42
-55 to +150
Units
V
A
d
c
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
V
W
°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Weight
Junction-to-Ambient (PCB Mounted,steady state)
Min.
–––
–––
–––
–––
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
1.2
–––
40
–––
Units
°C/W
g
g (oz.)
www.irf.com
1
01/27/10
IRG4BC30FD-SPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
gfe
I
CES
V
FM
I
GES
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
e
Min. Typ. Max. Units
600
—
—
—
—
3.0
—
6.1
—
—
—
—
—
—
0.69
1.59
1.99
1.7
—
-11
10
—
—
1.4
1.3
—
—
—
1.8
—
—
6.0
—
—
250
2500
1.7
1.6
±100
nA
V
V
V
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 15V
See Fig. 2, 5
V/°C V
GE
= 0V, I
C
= 1mA
I
C
= 17A
V
I
C
= 31A
I
C
= 17A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S V
CE
= 100V, I
C
= 17A
µA
V
GE
= 0V, V
CE
= 600V
f
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 12A
I
F
= 12A, T
J
= 150°C
V
GE
= ±20V
See Fig. 13
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
7.9
19
42
26
230
160
0.63
1.39
2.02
42
27
310
310
3.2
7.5
1100
74
14
42
80
3.5
5.6
80
220
180
120
77
12
28
—
—
350
230
—
—
3.9
—
—
—
—
—
—
—
—
—
60
120
6.0
10
180
600
—
—
nC
A
ns
pF
nH
ns
T
J
= 150°C
ns
nC
I
C
= 17A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
Conditions
See Fig. 8
I
C
= 17A, V
CC
= 480V
V
GE
= 15V, R
G
= 23Ω
Energy losses inlcude "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
See Fig. 9,10,11,18
I
C
= 17A, V
CC
= 480V
V
GE
= 15V, R
G
= 23Ω
Energy losses inlcude "tail" and
mJ diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
A/µs T
J
= 25°C
T
J
= 125°C
See Fig.
14
See Fig.
15
See Fig.
16
See Fig.
17
di/dt 200A/µs
V
R
= 200V
I
F
= 12A
See Fig. 7
2
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