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FF150R17ME3G

Description
IGBT Modules N-CH 1.7KV 240A
CategoryDiscrete semiconductor    The transistor   
File Size445KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FF150R17ME3G Overview

IGBT Modules N-CH 1.7KV 240A

FF150R17ME3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X11
Contacts11
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)240 A
Collector-emitter maximum voltage1700 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X11
Number of components2
Number of terminals11
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1050 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)1300 ns
Nominal on time (ton)366 ns
VCEsat-Max2.45 V
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF150R17ME3G
VorläufigeDaten
PreliminaryData
V
CES

1700
150
240
300
1050
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,2







typ.
2,00
2,40
5,8
1,70
3,2
13,5
0,45


0,28
0,30
0,05
0,066
0,81
1,00
0,18
0,30
33,0
48,0
32,0
47,0
max.
2,45
6,4




3,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
EconoDUAL™3ModulmitTrench/FeldstopIGBT³undEmitterControlled3Diode
EconoDUAL™3modulewithtrench/fieldstopIGBT³andEmitterControlled3diode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
I
C
= 6,00 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1700 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 150 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 9,1
I
C
= 150 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 9,1
I
C
= 150 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 9,1
I
C
= 150 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 9,1
I
C
= 150 A, V
CE
= 900 V, L
S
= 80 nH
V
GE
= ±15 V, di/dt = 2100 A/µs
R
Gon
= 9,1
I
C
= 150 A, V
CE
= 900 V, L
S
= 80 nH
V
GE
= ±15 V, du/dt = 3400 V/µs
R
Goff
= 9,1
V
GE
15 V, V
CC
= 1000 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on


E
off
I
SC
R
thJC
R
thCH
T
vj op




-40


t
P
10 µs, T
vj
= 125°C
600

0,028

A
0,12 K/W
K/W
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:CU
approvedby:MK
dateofpublication:2013-10-03
revision:2.1
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