BUH50G
Switch‐mode NPN Silicon
Planar Power Transistor
The BUH50G has an application specific state−of−art die designed
for use in 50 W HALOGEN electronic transformers and switch-mode
applications.
Features
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•
Improved Efficiency Due to Low Base Drive Requirements:
•
•
•
•
High and Flat DC Current Gain h
FE
Fast Switching
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproductible Parametric Distributions
Specified Dynamic Saturation Data
Full Characterization at 125°C
These Devices are Pb−Free and are RoHS Compliant*
POWER TRANSISTOR
4 AMPERES
800 VOLTS, 50 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Collector Current
Base Current
Base Current
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
500
800
800
9
4
8
2
4
50
0.4
−65 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
W
W/_C
_C
1
2
3
4
TO−220
CASE 221A
STYLE 1
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
BUH50G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.5
62.5
260
Unit
_C/W
_C/W
_C
BUH50
A
Y
WW
G
1
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BUH50G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 8
Publication Order Number:
BUH50/D
BUH50G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH)
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current
@ T
C
= 25°C
(V
CE
= Rated V
CES
, V
EB
= 0) @ T
C
= 125°C
Emitter−Cutoff Current (V
EB
= 9 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.33 Adc)
(I
C
= 2 Adc, I
B
= 0.66 Adc) 25°C
(I
C
= 2 Adc, I
B
= 0.66 Adc) 100°C
Collector−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.33 Adc)
(I
C
= 2 Adc, I
B
= 0.66 Adc)
(I
C
= 3 Adc, I
B
= 1 Adc)
DC Current Gain (I
C
= 1 Adc, V
CE
= 5 Vdc)
DC Current Gain
(I
C
= 2 Adc, V
CE
= 5 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 MHz)
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz)
Input Capacitance (V
EB
= 8 Vdc)
DYNAMIC SATURATION VOLTAGE
I
C
= 1 A
I
B1
= 0.33 A
V
CC
= 300 V
I
C
= 2 A
I
B1
= 0.66 A
V
CC
= 300 V
@ 1
ms
@ 3
ms
@ 1
ms
@ 3
ms
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 125°C
I
C
= 2 Adc
I
B1
= 0.4 Adc
I
B2
= 1 Adc
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
I
C
= 2 Adc
I
B1
= 0.66 Adc
I
B2
= 1 Adc
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
t
on
t
off
t
on
t
off
t
on
t
off
t
f
t
s
t
c
t
f
t
s
t
c
V
CE(dsat)
1.75
5
0.3
0.5
6
14
0.75
4
95
2.5
110
0.95
100
2.9
250
3.5
250
2
200
3.5
V
V
V
V
f
T
C
ob
C
ib
4
50
850
100
1200
MHz
pF
pF
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 25°C
h
FE
7
5
V
BE(sat)
0.86
0.94
0.85
V
CE(sat)
0.2
0.32
0.29
0.5
13
10
1.2
1.6
1.5
Vdc
0.5
0.6
0.7
1
−
−
Vdc
V
CEO(sus)
I
CEO
I
CES
I
EBO
500
100
100
1000
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
Dynamic Saturation
Voltage:
Determined 1
ms
and
3
ms
respectively after
rising I
B1
reaches
90% of final I
B1
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
ms)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
I
C
= 2 Adc, I
B1
= 0.4 Adc
I
B2
= 0.4 Adc
V
CC
= 125 Vdc
I
C
= 2 Adc, I
B1
= 0.4 Adc
I
B2
= 1 Adc
V
CC
= 125 Vdc
I
C
= 1 Adc, I
B1
= 0.3 Adc
I
B2
= 0.3 Adc
V
CC
= 125 Vdc
ns
ms
ns
ms
ns
ms
ns
ms
ns
ns
ms
ns
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
80
95
1.2
1.7
150
180
90
100
1.7
2.5
190
220
150
2.5
300
150
2.75
350
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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BUH50G
TYPICAL STATIC CHARACTERISTICS
100
V
CE
= 1 V
hFE , DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
10
T
J
= - 40°C
hFE , DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
10
T
J
= - 40°C
100
V
CE
= 5 V
1
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
1
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volt
10
T
J
= 25°C
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
10
I
C
/I
B
= 3
4A
3A
1
2A
1A
I
C
= 500 mA
0.1
0.01
0.1
1
I
B
, BASE CURRENT (mA)
10
1
T
J
= - 40°C
0.1
T
J
= 25°C
0.01
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
T
J
= 125°C
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
10
I
C
/I
B
= 5
VCE , VOLTAGE (VOLTS)
T
J
= - 40°C
VBE , VOLTAGE (VOLTS)
10
I
C
/I
B
= 3
1
1
T
J
= 125°C
0.1
T
J
= 25°C
T
J
= 125°C
0.01
0.01
T
J
= - 40°C
T
J
= 25°C
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
0.1
0.01
1
0.1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Base−Emitter Saturation Region
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BUH50G
TYPICAL STATIC CHARACTERISTICS
10
I
C
/I
B
= 5
VBE , VOLTAGE (VOLTS)
1000
C
ib
(pF)
10000
T
J
= 25°C
f
(test)
= 1 MHz
1
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
C, CAPACITANCE (pF)
100
C
ob
(pF)
10
0.1
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
1
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 7. Base−Emitter Saturation Region
Figure 8. Capacitance
TYPICAL SWITCHING CHARACTERISTICS
3000
2500
2000
t, TIME (ns)
I
C
/I
B
= 5
1500
1000
1000
500
I
C
/I
B
= 3
0
1
2
4
3
I
C
, COLLECTOR CURRENT (AMPS)
5
0
1
I
C
/I
B
= 5
4
2
3
I
C
, COLLECTOR CURRENT (AMPS)
5
t, TIME (ns)
2000
I
C
/I
B
= 3
T
J
= 125°C
T
J
= 25°C
I
Boff
= I
C
/2
V
CC
= 125 V
PW = 20
ms
4000
T
J
= 125°C
T
J
= 25°C
3000
I
Boff
= I
C
/2
V
CC
= 125 V
PW = 20
ms
Figure 9. Resistive Switching, t
on
4000
I
Boff
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
t, TIME (ns)
300
Figure 10. Resistive Switch Time, t
off
3000
t, TIME (ns)
I
C
/I
B
= 3
I
Boff
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
200
t
c
2000
100
1000
T
J
= 125°C
T
J
= 25°C
0
1
t
fi
I
C
/I
B
= 5
4
0
1
3
2
I
C
, COLLECTOR CURRENT (AMPS)
4
T
J
= 125°C
T
J
= 25°C
2
3
I
C
, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Storage Time, t
si
Figure 12. Inductive Storage Time,
t
c
& t
fi
@ I
C
/I
B
= 3
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BUH50G
TYPICAL CHARACTERISTICS
250
t
c
200
t si , STORAGE TIME (
μs)
3000
I
C
= 1 A
2000
T
J
= 125°C
T
J
= 25°C
4000
T
J
= 125°C
T
J
= 25°C
I
Boff
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
t, TIME (ns)
150
100
I
Boff
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
1
1000
I
C
= 2 A
0
50
0
t
fi
3
2
I
C
, COLLECTOR CURRENT (AMPS)
4
3
4
5
6
7
h
FE
, FORCED GAIN
8
9
10
Figure 13. Inductive Switching, t
c
& t
fi
@ I
C
/I
B
= 5
Figure 14. Inductive Storage Time
150
140
130
t fi , FALL TIME (ns)
120
110
100
90
80
70
60
50
2
T
J
= 125°C
T
J
= 25°C
4
6
h
FE
, FORCED GAIN
I
C
= 2 A
I
C
= 1 A
I
Boff
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
350
I
Boff
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
t c , CROSSOVER TIME (ns)
250
I
C
= 1 A
150
T
J
= 125°C
T
J
= 25°C
50
I
C
= 2 A
8
10
3
5
7
h
FE
, FORCED GAIN
9
11
Figure 15. Inductive Fall Time
Figure 16. Inductive Crossover Time
1
SECOND BREAKDOWN
DERATING
POWER DERATING FACTOR
0.8
0.6
THERMAL DERATING
0.4
0.2
0
20
40
100
80
120
60
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 17. Forward Power Derating
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