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FSB50550AB Smart Power Module (SPM®)
January 2012
FSB50550AB
Smart Power Module (SPM
®
)
Features
• 500V R
DS(on)
=1.4W(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• HVIC temperature sensing
• Embedded bootstrap diode in the package
• RoHS compliant
Motion-SPM
Applications
TM
• Three-phase inverter driver for small power ac motor drives
General Description
FSB50550AB is a tiny smart power module (SPM
®
) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50550AB
1. For the measurement point of case temperature T
C
, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
2
FSB50550AB Rev. A
www.fairchildsemi.com
FSB50550AB Smart Power Module (SPM®)
Pin descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Pin Name
COM
V
B(U)
V
CC(U)
IN
(UH)
IN
(UL)
N.C
V
B(V)
V
CC(V)
IN
(VH)
IN
(VL)
N.C
V
B(W)
V
CC(W)
IN
(WH)
IN
(WL)
V
ts
P
U, V
S(U)
N
U
N
V
V, V
S(V)
N
W
W, V
S(W)
IC Common Supply Ground
Pin Description
Bias Voltage for U Phase High Side FRFET Driving
Bias Voltage for U Phase IC and Low Side FRFET Driving
Signal Input for U Phase High-side
Signal Input for U Phase Low-side
N.C
Bias Voltage for V Phase High Side FRFET Driving
Bias Voltage for V Phase IC and Low Side FRFET Driving
Signal Input for V Phase High-side
Signal Input for V Phase Low-side
N.C
Bias Voltage for W Phase High Side FRFET Driving
Bias Voltage for W Phase IC and Low Side FRFET Driving
Signal Input for W Phase High-side
Signal Input for W Phase Low-side
Output for HVIC temperature sensing
Positive DC–Link Input
Output for U Phase & Bias Voltage Ground for High Side FRFET Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Output for V Phase & Bias Voltage Ground for High Side FRFET Driving
Negative DC–Link Input for W Phase
Output for W Phase & Bias Voltage Ground for High Side FRFET Driving
(1) COM
(2) V
B(U)
(3) V
CC(U)
(4) IN
(UH)
(5) IN
(UL)
(6) N.C
(7) V
B(V)
(8) V
CC(V)
(9) IN
(VH)
(10) IN
(VL)
(11) N.C
(12) V
B(W)
(13) V
CC(W)
(14) IN
(WH)
(15) IN
(WL)
(16) Vts
VCC
HIN
LIN
COM
Vts
VB
HO
VS
LO
(23) W, V
S(W)
(22) N
W
VCC
HIN
LIN
COM
VB
HO
VS
LO
(21) V, V
S(V)
(19) N
U
(20) N
V
VCC
HIN
LIN
COM
VB
HO
VS
LO
(18) U, V
S(U)
(17) P
Note:
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM
®
. External connections should be made as indicated in Figure 3
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
3
FSB50550AB Rev. A
www.fairchildsemi.com
FSB50550AB Smart Power Module (SPM®)
Electrical Characteristics
(T
J
= 25°C, V
CC
=V
BS
=15V Unless Otherwise Specified)
Inverter Part
(Each FRFET Unless Otherwise Specified)
Symbol
BV
DSS
I
DSS
R
DS(on)
V
SD
t
ON
t
OFF
t
rr
E
ON
E
OFF
RBSOA
V = 400V, V
CC
= V
BS
= 15V, I
D
= I
DP
, V
DS
=BV
DSS
,
Reverse-bias Safe Oper-
PN
T
J
= 150°C
ating Area
High- and low-side FRFET switching (Note 3)
Switching Times
V
PN
= 300V, V
CC
= V
BS
= 15V, I
D
= 1.2A
V
IN
= 0V
«
5V, Inductive load L=3mH
High- and low-side FRFET switching
(Note 2)
Parameter
Conditions
Min Typ Max Units
500
-
-
-
-
-
-
-
-
-
-
1.0
-
800
500
140
90
10
-
1
1.4
1.2
-
-
-
-
-
V
mA
W
V
ns
ns
ns
mJ
mJ
Drain-Source Breakdown
V
IN
= 0V, I
D
= 1mA (Note 1)
Voltage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-Resistance
Drain-Source Diode
Forward Voltage
V
IN
= 0V, V
DS
= 500V
V
CC
= V
BS
= 15V, V
IN
= 5V, I
D
= 1.2A
V
CC
= V
BS
= 15V, V
IN
= 0V, I
D
= -1.2A
Full Square
Control Part
(Each HVIC Unless Otherwise Specified)
Symbol
I
QCC
I
QBS
UV
CCD
UV
CCR
UV
BSD
UV
BSR
V
ts
V
IH
V
IL
Parameter
Quiescent V
CC
Current
Quiescent V
BS
Current
Low-side Undervoltage
Protection (Figure 8)
High-side Undervoltage
Protection (Figure 9)
HVIC Temperature sens-
ing voltage output
ON Threshold Voltage
OFF Threshold Voltage
V
CC
=15V, V
IN
=0V
V
BS
=15V, V
IN
=0V
Conditions
Applied between V
CC
and COM
Applied between V
B(U)
-U,
V
B(V)
-V, V
B(W)
-W
Min Typ Max Units
-
-
7.4
8.0
7.4
8.0
600
2.9
-
-
-
8.0
8.9
8.0
8.9
790
-
-
200
100
9.4
9.8
9.4
9.8
980
-
0.8
mA
mA
V
V
V
V
mV
V
V
V
CC
Undervoltage Protection Detection Level
V
CC
Undervoltage Protection Reset Level
V
BS
Undervoltage Protection Detection Level
V
BS
Undervoltage Protection Reset Level
V
CC
=15V, T
HVIC
=25°C(Note 4)
Logic High Level
Logic Low Level
Applied between IN and COM
Bootstrap Diode Part
(Each Bootstrap diode Unless Otherwise Specified)
Symbol
V
FB
t
rrB
Note:
1. BV
DSS
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM
®
. V
PN
should be sufficiently less than this value considering the
effect of the stray inductance so that V
DS
should not exceed BV
DSS
in any case.
2. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 7 for the RBSOA test cir-
cuit that is same as the switching test circuit.
4. V
ts
is only for sensing temperature of module and cannot shutdown MOSFETs automatically.
5. Built in bootstrap diode includes around 15
Ω
resistance characteristic. Please refer to Figure 2.
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