SST38VF6403-90-5I-EKE datasheet, PDF

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SST38VF6403-90-5I-EKE: DescriptionNOR Flash 2.7 to 3.6V 64Mbit Parallel Adv MPF+; Categorystorage storage; File Size793KB，65 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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SST38VF6403-90-5I-EKE Overview

NOR Flash 2.7 to 3.6V 64Mbit Parallel Adv MPF+

SST38VF6403-90-5I-EKE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Factory Lead Time	16 weeks
Maximum access time	90 ns
Other features	BOTTOM BOOT BLOCK
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
JESD-609 code	e3
length	18.4 mm
memory density	67108864 bit
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	1K
Number of terminals	48
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	4 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	4K
Maximum standby current	0.00003 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
switch bit	YES
type	NOR TYPE
width	12 mm
Base Number Matches	1

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64 Mbit (x16) Advanced Multi-Purpose Flash Plus

A Microchip Technology Company

SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404

Data Sheet

The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose

Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-

performance CMOS Super- Flash technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and manufacturability compared

with alternate approaches. The SST38VF6401/6402/6403/6404 write (Program or

Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard

pin assignments for x16 memories.

Features

• Organized as 4M x16

• Single Voltage Read and Write Operations

– 2.7-3.6V

• Fast Erase Times:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

• Superior Reliability

– Endurance: 100,000 Cycles minimum

– Greater than 100 years Data Retention3

• Erase-Suspend/-Resume Capabilities

• Fast Word and Write-Buffer Programming Times:

– Word-Program Time: 7 µs (typical)

– Write Buffer Programming Time: 1.75 µs / Word (typical)

- 16-Word Write Buffer

• Low Power Consumption (typical values at 5 MHz)

– Active Current: 4 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

• Automatic Write Timing

– Internal V

Generation

• 128-bit Unique ID

• Security-ID Feature

– 256 Word, user One-Time-Programmable

• End-of-Write Detection

– Toggle Bits

– Data# Polling

– RY/BY# Output

• Protection and Security Features

– Hardware Boot Block Protection/WP# Input Pin, Uni-

form (32 KWord) and Non-Uniform (8 KWord) options

available

– User-controlled individual block (32 KWord) protection,

using software only methods

– Password protection

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• CFI Compliant

• Packages Available

– 48-lead TSOP

– 48-ball TFBGA

• Hardware Reset Pin (RST#)

• Fast Read and Page Read Access Times:

– 90 ns Read access time

– 25 ns Page Read access times

- 4-Word Page Read buffer

• All devices are RoHS compliant

• Latched Address and Data

www.microchip.com

DS-25015A

04/11

64 Mbit (x16) Advanced Multi-Purpose Flash Plus

A Microchip Technology Company

SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404

Data Sheet

Product Description

The SST38VF6401, SST38VF6402, SST38VF6403, and SST38VF6404 devices are 4M x16 CMOS

Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with SST proprietary, high-per-

formance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401/

6402/6403/6404 write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to

JEDEC standard pin assignments for x16 memories.

Featuring high performance Word-Program, the SST38VF6401/6402/6403/6404 provide a typical Word-

Program time of 7 µsec. For faster word-programming performance, the Write-Buffer Programming

feature, has a typical word-program time of 1.75 µsec. These devices use Toggle Bit or Data# Polling

to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices

provide a Page-Read feature that enables a faster word read time of 25 ns, for words on the same

page.

To protect against inadvertent write, the SST38VF6401/6402/6403/6404 have on-chip hardware and

Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of appli-

cations, these devices are available with 100,000 cycles minimum endurance. Data retention is rated

at greater than 100 years.

The SST38VF6401/6402/6403/6404 are suited for applications that require the convenient and econom-

ical updating of program, configuration, or data memory. For all system applications, Advanced MPF+

significantly improve performance and reliability, while lowering power consumption. These devices

inherently use less energy during Erase and Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, current, and time of application. For any given

voltage range, the SuperFlash technology uses less current to program and has a shorter erase time;

therefore, the total energy consumed during any Erase or Program operation is less than alternative

flash technologies.

These devices also improve flexibility while lowering the cost for program, data, and configuration stor-

age applications. The SuperFlash technology provides fixed Erase and Program times, independent of

the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware

does not have to be modified or de-rated as is necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated Erase/Program cycles.

The SST38VF6401/6402/6403/6404 also offer flexible data protection features. Applications that

require memory protection from program and erase operations can use the Boot Block, Individual

Block Protection, and Advanced Protection features. For applications that require a permanent solu-

tion, the Irreversible Block Locking feature provides permanent protection for memory blocks.

To meet high-density, surface mount requirements, the SST38VF6401/6402/6403/6404 devices are

offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 2 and 3 for pin assignments and

Table 1 for pin descriptions.

DS-25015A

04/11

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