MAC8SD, MAC8SM, MAC8SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Features
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Sensitive Gate Allows Triggering by Microcontrollers and other
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Logic Circuits
Uniform Gate Trigger Currents in Three Quadrants; Q1, Q2, and Q3
High Immunity to dv/dt − 25 V/ms Minimum at 110°C
High Commutating di/dt − 8.0 A/ms Minimum at 110°C
Maximum Values of I
GT
, V
GT
and I
H
Specified for Ease of Design
On-State Current Rating of 8 Amperes RMS at 70°C
High Surge Current Capability − 70 Amperes
Blocking Voltage to 800 Volts
Rugged, Economical TO−220AB Package
Pb−Free Packages are Available*
1
Unit
V
400
600
800
I
T(RMS)
I
TSM
8.0
70
A
A
1
I
2
t
P
GM
P
G(AV)
T
J
T
stg
20
16
0.35
−40 to +110
−40 to +150
A
2
sec
W
W
°C
°C
2
3
4
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAC8SxG
AYWW
2
TO−220AB
CASE 221A−09
STYLE 4
x
A
Y
WW
G
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 110°C,
Sine Wave, 50 to 60 Hz, Gate Open)
MAC8SD
MAC8SM
MAC8SN
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 70°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 110°C)
Circuit Fusing Consideration
(t = 8.3 ms)
Symbol
V
DRM,
V
RRM
Value
3
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 70°C)
Average Gate Power
(t = 8.3 ms, T
C
= 70°C)
Operating Junction Temperature Range
Storage Temperature Range
ORDERING INFORMATION
Device
MAC8SD
MAC8SDG
MAC8SM
MAC8SMG
MAC8SN
MAC8SNG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Preferred
devices are recommended choices for future use
and best overall value.
1
December, 2005 − Rev. 5
Publication Order Number:
MAC8S/D
MAC8SD, MAC8SM, MAC8SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.2
62.5
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note ) (I
TM
=
11A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current (V
D
= 12V, Gate Open, Initiating Current =
150mA)
Latching Current (V
D
= 24V, I
G
= 5mA)
MT2(+), G(+)
MT2(−), G(−)
MT2(+), G(−)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
V
D
= 400 V, I
TM
= 3.5 A, Commutating dv/dt = 10 V
m/sec,
Gate Open, T
J
= 110°C, f = 500 Hz, Snubber: C
S
= 0.01
mF,
R
S
=15
W,
See Figure 16.)
Critical Rate of Rise of Off-State Voltage
(V
D
= Rate V
DRM
, Exponential Waveform, R
GK
= 510
W,
T
J
= 110°C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
di/dt
(c)
8.0
10
−
A/ms
V
TM
I
GT
−
−
−
I
H
I
L
−
−
−
V
GT
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
5.0
10
5.0
15
20
15
V
−
2.0
3.0
3.0
3.0
5.0
5.0
5.0
10
mA
mA
−
−
1.85
V
mA
T
J
= 25°C
T
J
= 110°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
dv/dt
25
75
−
V/ms
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MAC8SD, MAC8SM, MAC8SN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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MAC8SD, MAC8SM, MAC8SN
P(AV), AVERAGE POWER DISSIPATION (WATTS)
T C , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
110
25
a
a
100
a
= 30 and 60°
90
a
a
20
180°
120°
DC
a
= CONDUCTION ANGLE
15
60°
90°
80
10
a
= 30°
5
a
= CONDUCTION ANGLE
70
90°
180°
DC
60
0
2
4
6
8
10
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
12
0
0
2
4
6
8
10
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
12
Figure 1. RMS Current Derating
Figure 2. Maximum On−State Power Dissipation
R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
I T, INSTANTANOUS ON-STATE CURRENT (AMPS)
100
Typical @ T
J
= 25°C
Maximum @
T
J
= 110°C
10
1
Z
qJC(t)
= R
qJC(t)
r(t)
0.1
1
Maximum @
T
J
= 25°C
0.1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
6
0.01
0.1
1
10
100
t, TIME (ms)
1000
1@
4
10
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
10
I H , HOLDING CURRENT (mA)
I L , LATCHING CURRENT (mA)
25
8
20
6
MT2 NEGATIVE
4
MT2 POSITIVE
2
15
10
Q3
5
Q1
0
−40 −25
−10
5
20
35
50
65
80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
0
−40 −25
−10
5
20
35
50
65
T
J
, JUNCTION TEMPERATURE (°C)
80
95
110
Figure 5. Typical Holding Current Versus
Junction Temperature
Figure 6. Typical Latching Current Versus
Junction Temperature
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MAC8SD, MAC8SM, MAC8SN
14
V GT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
12
10
8
6
4
2
Q1
0
−40 −25
−10
5
20
35
50
65
T
J
, JUNCTION TEMPERATURE (°C)
80
95
110
Q2
Q3
1
0.9
Q3
0.8
0.7
0.6
0.5
Q2
0.4
0.3
−40 −25
−10
5
20
35
50
65
T
J
, JUNCTION TEMPERATURE (°C)
80
Q1
95
110
Q3
Q1
Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
200
180
STATIC dv/dt (V/mS)
160
140
800 V
120
100
V
PK
= 400 V
T
J
= 110°C
130
R
G − MT1
= 510
W
120
STATIC dv/dt (V/mS)
T
J
= 100°C
110
110°C
600 V
100
90
80
60
100
80
200
300
400
500
600
700
800
RGK, GATE−MT1 RESISTANCE (OHMS)
900
1000
400
450
500
550
600
650
V
PK
, Peak Voltage (Volts)
120°C
700
750
800
Figure 9. Typical Exponential Static dv/dt Versus
Gate−MT1 Resistance, MT2(+)
Figure 10. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(+)
130
120
V
PK
= 400 V
STATIC dv/dt (V/mS)
STATIC dv/dt (V/mS)
110
100
90
R
G − MT1
= 510
W
80
70
100
105
T
J
, Junction Temperature (°C)
110
600 V
800 V
350
300
T
J
= 100°C
250
110°C
200
150
R
G − MT1
= 510
W
100
400
450
500
550
600
650
V
PK
, Peak Voltage (Volts)
700
750
800
Figure 11. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)
Figure 12. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(−)
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