BLL8H1214L-500;
BLL8H1214LS-500
LDMOS L-band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 150 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
1.2 to 1.4
V
DS
(V)
50
P
L
(W)
500
G
p
(dB)
17
D
(%)
50
t
r
(ns)
20
t
f
(ns)
6
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLL8H1214L-500 (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLL8H1214LS-500 (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLL8H1214L-500
BLL8H1214LS-500
-
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
100
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
C;
P
L
= 500 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
0.046 K/W
0.059 K/W
0.069 K/W
0.064 K/W
Typ
Unit
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 270 mA
Min
100
1.3
-
32
-
1.7
-
Typ
-
1.8
-
42
-
3
100
Max Unit
-
2.2
1.4
-
140
-
164
V
V
A
A
nA
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.5 A
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 50 V; I
Dq
= 150 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production test circuit.
Symbol
V
DS
G
p
RL
in
P
L(1dB)
D
P
droop(pulse)
t
r
t
f
Parameter
drain-source voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
P
L
= 500 W
P
L
= 500 W
P
L
= 500 W
P
L
= 500 W
Conditions
P
L
= 500 W
P
L
= 500 W
P
L
= 500 W
Min Typ Max Unit
-
15
-
-
45
-
-
-
-
17
10
600
50
0
20
6
50
-
-
-
-
0.3
50
50
V
dB
dB
W
%
dB
ns
ns
7. Test information
7.1 Ruggedness in class-AB operation
The BLL8H1214L-500 and BLL8H1214LS-500 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 150 mA; P
L
= 500 W; t
p
= 300
s;
= 10 %.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.2 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
(GHz)
1.2
1.3
1.4
Z
S
()
1.268
j2.623
2.193
j2.457
2.359
j2.052
Z
L
()
2.987
j1.664
2.162
j1.326
1.604
j1.887
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1
C2
C3, C4
C5, C11, C12
C6
C7, C8, C10
C9
C13
R1
R2
[1]
[2]
[3]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
metal film resistor
Value
22
F,
35 V
51 pF
100 pF
1 nF
47 pF
51 pF
100 pF
10
F,
63 V
56
51
[1]
[1]
[2]
[1]
[3]
[3]
Remarks
SMD 0603
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
C10
C4
C12
C1
C2
R1
C3
C5
C8
C9
C11
C13
R2
C6
C7
001aaj490
Printed-Circuit Board (PCB): Duroid 6006;
r
= 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
7.4 RF performance graphs
7.4.1 Performance curves measured with = 10 %, t
p
= 300
s
and T
h
= 25
C
aaa-005403
aaa-005404
800
P
L
(W)
(1)
(2)
20
G
p
(dB)
(3)
16
600
(1)
(2)
(3)
12
400
8
200
4
0
0
4
8
12
16
P
i
(W)
20
0
0
100
200
300
400
500
600
P
L
(W)
700
V
DS
= 50 V; I
Dq
= 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
V
DS
= 50 V; I
Dq
= 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 3.
Output power as a function of input power;
typical values
Fig 4.
Power gain as a function of output power;
typical values
© Ampleon The Netherlands B.V. 2015. All rights reserved.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
5 of 20
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