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BGU7258X

Description
RF Amplifier 5 GHz ISM SiGe:C low noise amp
CategoryTopical application    Wireless rf/communication   
File Size341KB,21 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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RF Amplifier 5 GHz ISM SiGe:C low noise amp

BGU7258X Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF Amplifier
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseQFN-6
TypeLNA
TechnologySiGe
Operating Frequency5 GHz
P1dB - Compression Point- 4 dBm
Gain13 dB
Operating Supply Voltage3.3 V
NF - Noise Figure1.6 dB
Test Frequency5.9 GHz
OIP3 - Third Order Intercept8 dBm
Operating Supply Current13 mA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 85 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Frequency Range4.9 GHz to 5.925 GHz
Number of Channels1 Channel
Development KitOM7870
Input Return Loss17 dB
Isolation dB20 dB
Factory Pack Quantity4000
Unit Weight0.000244 oz
BGU7258
SO
N6
HX
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
Rev. 3 — 29 August 2018
Product data sheet
1
Product profile
1.1 General description
The BGU7258 is a fully integrated MMIC Low Noise Amplifier (LNA) for wireless receiver
applications in the 5 GHz to 6 GHz ISM band. Manufactured in NXPs high performance
SiGe:C technology, the BGU7258 couples best-in-class gain, noise figure, linearity
and efficiency with the process stability and ruggedness that are the hallmarks of SiGe
technology. The BGU7258 features a robust temperature-compensated internal bias
network and an integral bypass / shutdown feature that stabilizes the DC operating
point over temperature and enables operation in the presence of high input signals,
while minimizing current consumption in bypass (standby) mode. The 1.6 mm x 1.6
mm footprint coupled with only two external components, makes the circuit board
implementation of the BGU7258 LNA the smallest IEEE 802.11ac LNA with bypass
solution on the market, ideal for space sensitive applications.
1.2 Features and benefits
Fully integrated, high performance LNA with built-in bypass
Integrated DC blocking at RF input and RF output, with only two external components
needed.
Low 1.6 dB noise figure with 13 mA current consumption
Low bypass current of 1 µA (typical)
Single supply 3.0 V to 3.6 V operation
Integrated concurrent 2.4 GHz notch filter and temperature stabilized bias network
High IP3
i
and low EVM
High ESD protection of 2 kV (HBM) on all pins
Small, 0.5 mm pitch, 1.6 x 1.6 x 0.5 mm QFN-style package, MSL 1 at 260 °C
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS) following NXPs RHF-2006 indicator D (dark green)
1.3 Applications
IEEE 802.11a/n/ac WiFi, WLAN
Smartphones, tablets, net-books, and other portable computing devices
Access points, routers, gateways
Wireless video
LTE advanced in unlicensed spectrum (LTE-U)
General-purpose ISM applications
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