SI1033X-T1-GE3 datasheet, PDF - EEWORLD Datasheet

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Si1033X

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

R

DS(on)

()

8 at V

GS

= - 4.5 V

- 20

12 at V

GS

= - 2.5 V

15 at V

GS

= - 1.8 V

20 at V

GS

= - 1.5 V

I

D

(mA)

- 150

- 125

- 100

- 30

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET: 1.5 V Rated

• High-Side Switching

• Low On-Resistance: 8



• Low Threshold: 0.9 V (typ.)

• Fast Switching Speed: 45 ns (typ.)

• 1.5 V Operation

• Gate-Source ESD Protected: 2000 V

• Compliant to RoHS Directive 2002/95/EC

SC-89

BENEFITS

S1

1

6

D1

G1

D2

2

5

G2

S2

Marking Code: K

3

4

•

Ease in Driving Switches

Low Offset (Error) Voltage

Low-Voltage Operation

High-Speed Circuits

Low Battery Voltage Operation

Top View

Ordering Information:

Si1033X-T1-GE3 (Lead (Pb)-free and Halogen-free)

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

• Battery Operated Systems

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25 °C, unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150 °C)

a

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

Gate-Source ESD Rating (HBM, Method 3015)

Notes:

a. Surface mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

T

A

= 25 °C

T

A

= 85 °C

T

A

= 25 °C

T

A

= 85 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

J

, T

stg

ESD

- 450

280

145

- 55 to 150

2000

- 155

- 110

- 650

- 380

250

130

mW

°C

V

5s

±5

- 145

- 105

mA

Steady State

- 20

Unit

V

Document Number: 71428

S10-2544-Rev. C, 08-Nov-10

www.vishay.com

1

Si1033X

Vishay Siliconix

SPECIFICATIONS

(T

A

= 25 °C, unless otherwise noted)

Parameter

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State

Resistance

a

Symbol

V

GS(th)

I

GSS

I

DSS

I

D(on)

Test Conditions

V

DS

= V

GS

, I

D

= - 250 µA

V

DS

= 0 V, V

GS

= ± 2.8 V

V

DS

= 0 V, V

GS

= ± 4.5 V

V

DS

= - 16 V, V

GS

= 0 V

V

DS

= - 16 V, V

GS

= 0 V, T

J

= 85 °C

V

DS

= - 5 V, V

GS

= - 4.5 V

V

GS

= - 4.5 V, I

D

= - 150 mA

V

GS

= - 2.5 V, I

D

= - 125 mA

V

GS

= - 1.8 V, I

D

= - 100 mA

V

GS

= - 1.5 V, I

D

= - 30 mA

V

DS

= - 10 V, I

D

= - 150 mA

I

S

= - 150 mA, V

GS

= 0 V

Min.

- 0.40

Typ.

a

Max.

- 1.20

Unit

V

µA

nA

µA

mA

± 0.5

±1

-1

- 200

±1

±2

- 500

- 10

8

12

15

20

R

DS(on)



Forward Transconductance

a

Diode Forward Voltage

a

Dynamic

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

g

fs

V

SD

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

0.4

- 1.2

1500

S

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 150 mA

150

450

55

pC

V

DD

= - 10 V, R

L

= 65



I

D



- 150 mA, V

GEN

= - 4.5 V, R

g

= 10



30

60

30

ns

Notes:

a. Pulse test; pulse width



300 µs, duty cycle



2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

(T

A

= 25 °C, unless otherwise noted)

0.5

V

GS

= 5 V thru 2.5 V

0.4

1.8 V

0.3

I

D

- Drain Current (mA)

I

D

- Drain Current (A)

2V

400

500

T

J

= - 55 °C

25 °C

300

125 °C

0.2

200

0.1

100

0.0

0

1

2

3

4

5

6

V

DS

- Drain-to-Source Voltage (V)

0

0.0

0.5

1.0

1.5

2.0

2.5

V

GS

- Gate-to-Source Voltage (V)

3.0

Output Characteristics

www.vishay.com

2

Transfer Characteristics

Document Number: 71428

S10-2544-Rev. C, 08-Nov-10

Si1033X

Vishay Siliconix

TYPICAL CHARACTERISTICS

(T

A

= 25 °C, unless otherwise noted)

25

V

GS

= 1.8 V

R

DS(on)

- On-Resistance ()

20

C - Capacitance (pF)

100

120

V

GS

= 0 V

f = 1 MHz

80

C

iss

15

V

GS

= 2.5 V

10

V

GS

= 4.5 V

60

40

C

oss

20

C

rss

0

4

8

12

16

V

DS

- Drain-to-Source Voltage (V)

20

5

0

200

400

600

I

D

- Drain Current (mA)

800

1000

0

On-Resistance vs. Drain Current

5

V

DS

= 10 V

I

D

= 150 mA

R

DS(on)

- On-Resistance (Ω)

(Normalized)

4

1.4

1.6

Capacitance

V

GS

- Gate-to-Source Voltage (V)

V

GS

= 4.5 V

I

D

= 150 mA

1.2

V

GS

= 1.8 V

I

D

= 125 mA

3

2

1.0

1

0.8

0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.6

- 50

- 25

Q

g

- Total Gate Charge (nC)

0

25

50

75

100

T

J

- Junction Temperature (°C)

125

Gate Charge

1000

T

J

= 125 °C

R

DS(on)

- On-Resistance ()

40

I

S

- Source Current (mA)

50

On-Resistance vs. Junction Temperature

100

T

J

= 25 °C

T

J

= - 55 °C

10

I

D

= 150 mA

30

20

10

I

D

= 125 mA

1

0.0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

1

V

SD

- Source-to-Drain Voltage (V)

2

3

4

5

V

GS

- Gate-to-Source Voltage (V)

6

Surge-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 71428

S10-2544-Rev. C, 08-Nov-10

www.vishay.com

3

Si1033X

Vishay Siliconix

TYPICAL CHARACTERISTICS

T

A

= 25 °C, unless otherwise noted)

0.3

3.0

0.2

V

GS(th)

Variance (V)

I

D

= 0.25 mA

0.1

I

GSS

- ( µA)

2.5

2.0

V

GS

= 2.8 V

- 0.0

1.5

- 0.1

1.0

- 0.2

0.5

- 0.3

- 50

- 25

0

25

50

75

100

125

0.0

- 50

- 25

0

25

50

75

100

125

T

J

- Tempserature (°C)

T

J

- Temperature (°C)

Threshold Voltage Variance vs. Temperature

BV

GSS

- Gate-to-Source Breakdown Voltage (V)

0

-1

-2

-3

-4

-5

-6

-7

- 50

I

GSS

vs. Temperature

- 25

0

25

50

75

T

J

- Temperature (°C)

100

125

BV

GSS

vs. Temperature

2

1

Duty Cycle = 0.5

Normalized Effective Transient

Thermal Impedance

0.2

Notes:

0.1

0.05

t

1

P

DM

0.02

t

2

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 500 °C/W

t

1

t

2

Single Pulse

0.01

10

-4

10

-3

10

-2

10

-1

1

Square Wave Pulse Duration (s)

3. T

JM

- T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see

www.vishay.com/ppg?71428.

www.vishay.com

4

Document Number: 71428

S10-2544-Rev. C, 08-Nov-10

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

1

Document Number: 91000

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	SC-89
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.145 A
Maximum drain current (ID)	0.145 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.28 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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