DMS2220LFDB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
®
SUPER BARRIER RECTIFIER
Features
•
Low On-Resistance
•
95mΩ @V
GS
= -4.5V
•
120mΩ @V
GS
= -2.5V
•
86mΩ (typ) @V
GS
= -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low V
F
Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.0065 grams (approximate)
•
•
•
•
•
•
•
•
U-DFN2020-6
Type B
D
3
Q1
NC
2
D1
A
1
A
K
NC
D
D
4
5
6
K
G
S
S
G
K
Bottom View
Top View
Internal Schematic
Bottom View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMS2220LFDB-7
Notes:
Case
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ME = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Dot denotes Pin 1
ME
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
Mar
3
2010
X
Apr
4
2011
Y
May
5
YM
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 9 - 2
1 of 7
www.diodes.com
January 2013
© Diodes Incorporated
DMS2220LFDB
Maximum Ratings – TOTAL DEVICE
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
1.4
89
-55 to +150
Unit
W
°C/W
°C
Maximum Ratings – P-CHANNEL MOSFET – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-20
±12
-3.5
-12
Units
V
V
A
A
Maximum Ratings – SBR – D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
Value
20
14
1
3
Unit
V
V
A
A
Electrical Characteristics – P-CHANNEL MOSFET – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Min
-20
—
—
—
Typ
—
—
—
—
Max
—
-1
±100
±800
-1.3
95
120
—
Unit
V
µA
nA
V
mΩ
S
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -1.8V, I
D
= -1.0A
V
DS
= -5V, I
D
= -2.8A
V
GS
= 0V, I
S
= -1.6A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
-0.45
—
—
—
—
60
74
86
8
0.7
632
65
54
—
—
—
—
—
—
-1.2
—
—
—
Electrical Characteristics – SBR – D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Current (Note 7)
Notes:
Symbol
V
(BR)R
V
F
I
R
Min
20
—
—
Typ
—
—
—
Max
—
0.45
0.52
100
Unit
V
V
µA
Test Condition
I
R
= 1mA
I
F
= 0.5A
I
F
= 1.0A
V
R
= 20V
—
—
5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 9 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated
DMS2220LFDB
Q1 - P-CHANNEL MOSFET
10
10
V
GS
= -8.0V
V
GS
= -4.5V
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
V
GS
= -2.0V
6
-I
D
, DRAIN CURRENT (A)
8
V
GS
= -2.5V
8
6
4
V
GS
= -1.5V
4
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
2
V
GS
= -1.0V
V
GS
= -1.2V
2
0
0
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1
5
0
0.5
1.0
1.5
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.14
0.12
0.1
T
A
= 125°C
T
A
= 150°C
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
0.08
0.06
0.04
0.02
0
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
1
2
3
4
5
6
7
-I
D
, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
8
0
2
3
4
5
6
7
-I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.6
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.11
1.4
V
GS
= -2.5V
I
D
= -2A
0.09
V
GS
= -2.5V
I
D
= -2A
1.2
V
GS
= -4.5V
I
D
= -5A
1.0
0.07
V
GS
= -4.5V
I
D
= -5A
0.8
0.05
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0.03
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 9 - 2
3 of 7
www.diodes.com
January 2013
© Diodes Incorporated
DMS2220LFDB
10,000
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
f = 1MHz
1
0.9
0.8
0.7
0.6
0.5
I
D
= -250µA
I
D
= -1mA
C, CAPACITANCE (pF)
1,000
C
iss
100
C
oss
C
rss
0.4
0.3
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
0.2
-50
10
0
8
12
16
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Capacitance
4
20
10
-I
S
, SOURCE CURRENT (A)
8
6
T
A
= 25°C
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4 1.6
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 146°C/W
P(pk)
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
10
100
1,000
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 9 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
DMS2220LFDB
D1 - SBR
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
0.7
0.6
P
D
, POWER DISSIPATION (W)
0.5
0.4
0.3
0.2
0.1
0
1
T
A
= 150°C
0.1
T
A
= 125°C
0.01
T
A
= 85°C
T
A
= 25°C
0.001
T
A
= -55°C
0
0.5
1
1.5
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 11 Forward Power Dissipation
0.0001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 12 Typical Forward Characteristics
10,000
I
R
, INSTANTANEOUS REVERSE CURRENT(uA)
1,000
T
A
= 150°C
T
A
= 125°C
10,000
1,000
C, CAPACITANCE (pF)
f = 1MHz
100
T
A
= 85°C
10
100
1
T
A
= 25°C
10
0.1
0.01
0
5
10
15
20
25
30
35
40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 13 Typical Reverse Characteristics
T
A
, DERATED AMBIENT TEMPERATURE (°C)
1
0.1
1
10
100
V
R
, DC REVERSE VOLTAGE (V)
Fig. 14 Total Capacitance vs. Reverse Voltage
1.6
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 15 Forward Current Derating Curve
175
Note 5
150
125
100
75
50
25
0
0
10
20
30
V
R
, DC REVERSE VOLTAGE (V)
Fig. 16 Operating Temperature Derating
40
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 9 - 2
5 of 7
www.diodes.com
January 2013
© Diodes Incorporated
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