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MJE340

Description
Bipolar Transistors - BJT 0.5A 300V 20W NPN
CategoryDiscrete semiconductor    The transistor   
File Size104KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJE340 Overview

Bipolar Transistors - BJT 0.5A 300V 20W NPN

MJE340 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-225AA
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
MJE340G
Plastic Medium-Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.
Features
Suitable for Transformerless, Line−Operated Equipment
Thermopad Construction Provides High Power Dissipation Rating
for High Reliability
These Devices are Pb−Free and are RoHS Compliant*
Complementary to MJE350
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
EB
I
C
P
D
20
0.16
T
J
, T
stg
–65 to +150
W
mW/_C
_C
Value
300
3.0
500
Unit
Vdc
Vdc
mAdc
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATTS
SCHEMATIC
COLLECTOR
2, 4
3
BASE
1
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
q
JC
Max
6.25
Unit
_C/W
TO−225
CASE 77−09
STYLE 1
1 2
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
h
FE
30
240
V
CEO(sus)
300
I
CBO
I
EBO
100
100
mAdc
mAdc
Vdc
Symbol
Min
Max
Unit
MARKING DIAGRAM
YWW
JE340G
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
Y
WW
JE340
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJE340G
Package
TO−225
(Pb−Free)
Shipping
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 13
Publication Order Number:
MJE340/D
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