IPB80N06S3L-05
IPI80N06S3L-05, IPP80N06S3L-05
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
55
4.5
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB80N06S3L-05
IPI80N06S3L-05
IPP80N06S3L-05
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L05
3N06L05
3N06L05
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=40 A
Value
80
80
320
825
80
±16
165
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.1
page 1
2007-11-07
IPB80N06S3L-05
IPI80N06S3L-05, IPP80N06S3L-05
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
minimal footprint
6 cm
2
cooling area
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=115 µA
V
DS
=55 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=55 V,
V
GS
=0 V,
T
j
=125 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=5 V,
I
D
=46 A
V
GS
=5 V,
I
D
=46 A,
SMD version
V
GS
=10 V,
I
D
=69 A
V
GS
=10 V,
I
D
=69 A,
SMD version
55
1.2
-
-
1.6
0.01
-
2.2
1
µA
V
-
-
-
-
-
-
-
-
0.9
62
62
40
K/W
Values
typ.
max.
Unit
-
-
-
-
-
-
1
1
6.2
5.9
3.8
3.5
100
100
8
7.7
4.8
4.5
nA
mΩ
Rev. 1.1
page 2
2007-11-07
IPB80N06S3L-05
IPI80N06S3L-05, IPP80N06S3L-05
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=27.5 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=2.3
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
13060
1640
1560
24
49
65
41
-
-
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=11 V,
I
D
=80 A,
V
GS
=0 to 10 V
-
-
-
-
57
34
182
4.1
-
-
273
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=27.5 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
0.6
-
-
-
-
0.9
70
100
80
320
1.3
-
-
A
V
ns
nC
Current is limited by bondwire; with an
R
thJC
= 0.9 K/W the chip is able to carry 138 A at 25°C. For detailed
information see Application Note ANPS071E
2)
3)
4)
Defined by design. Not subject to production test.
Qualified at -5V and +16V.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-11-07
IPB80N06S3L-05
IPI80N06S3L-05, IPP80N06S3L-05
1 Power dissipation
P
tot
=f(T
C
);
V
GS
≥
4 V
2 Drain current
I
D
=f(T
C
);
V
GS
≥
4 V
180
160
140
120
100
80
60
P
tot
[W]
80
60
40
20
0
0
50
100
150
200
I
D
[A]
40
20
0
0
50
100
150
200
100
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
0
0.5
1 µs
10 µs
100 µs
0.1
0.05
100
1 ms
10
-1
Z
thJC
[K/W]
I
D
[A]
0.01
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.1
page 4
2007-11-07
IPB80N06S3L-05
IPI80N06S3L-05, IPP80N06S3L-05
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
300
10 V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
15
3.5 V
4V
4.5 V
6V
200
5V
10
R
DS(on)
[mΩ]
I
D
[A]
5V
4.5 V
100
4V
5
6V
10 V
3.5 V
3V
0
0
1
2
3
4
5
0
0
50
100
150
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 4V
parameter:
T
j
200
-55 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 80 A;
V
GS
= 10 V
7
6
150
25 °C
R
DS(on)
[m
Ω
]
5
I
D
[A]
175 °C
100
4
50
3
0
1
2
3
4
5
2
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.1
page 5
2007-11-07
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