BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
•
Moisture Sensitivity Level: 1
•
ESD Rating − Human Body Model: > 4000 V
ESD Rating
− Machine Model: > 400 V
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous
I
C
V
EBO
6.0
6.0
5.0
100
mAdc
V
CBO
80
50
30
Vdc
Symbol
V
CEO
65
45
30
Vdc
Value
Unit
Vdc
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
Unit
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1.8
R
qJA
P
D
556
300
mW/°C
°C/W
mW
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW/°C
°C/W
°C
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
January, 2017 − Rev. 17
Publication Order Number:
BC846ALT1/D
BC846ALT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector −Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mA)
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
−
−
−
110
200
420
−
−
−
−
580
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
220
450
800
0.25
0.6
−
−
700
770
V
V
mV
−
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
BC846A, B
BC847A, B, C BC850B, C
BC848A, B, C, BC849B, C
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
15
5.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CBO
nA
mA
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA,
V
CE
= 5.0 Vdc, R
S
= 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
f
T
C
obo
NF
100
−
−
−
−
−
−
−
−
4.5
10
4.0
MHz
pF
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
300
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
300
150°C
V
CE
= 5 V
200
25°C
200
25°C
100 −55°C
100 −55°C
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
0.18
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.0001
0.001
0.01
I
C
/I
B
= 20
Figure 2. DC Current Gain vs. Collector
Current
150°C
25°C
−55°C
0.1
I
C
, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
I
C
/I
B
= 20
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
V
CE
= 5 V
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
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3
BC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 6. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 7. Base−Emitter Temperature Coefficient
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 8. Capacitances
Figure 9. Current−Gain − Bandwidth Product
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BC846ALT1G Series
BC846B, SBC846B
600
500
400
25°C
300
200 −55°C
100
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
150°C
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
500
400
25°C
300
200 −55°C
100
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
600
150°C
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
Figure 10. DC Current Gain vs. Collector
Current
0.30
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 20
0.25
0.20
Figure 11. DC Current Gain vs. Collector
Current
150°C
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
25°C
I
C
/I
B
= 20
−55°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
V
CE
= 5 V
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
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