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DMF2834-000

Description
PIN Diodes Bands K and Ka Common Cathode
CategoryDiscrete semiconductor    diode   
File Size746KB,11 Pages
ManufacturerSkyworks
Websitehttp://www.skyworksinc.com
Environmental Compliance
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PIN Diodes Bands K and Ka Common Cathode

DMF2834-000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSkyworks
package instructionR-CTMW-F3
Contacts3
Manufacturer packaging codeCASE 504-013
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Maximum diode capacitance0.1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandK BAND
JESD-30 codeR-CTMW-F3
Humidity sensitivity level1
maximum noise index7.5 dB
Number of components2
Number of terminals3
Maximum operating frequency26 GHz
Minimum operating frequency18 GHz
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formMICROWAVE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationTRIPLE
Maximum time at peak reflow temperature40
Schottky barrier typeLOW BARRIER
DATA SHEET
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer
Diode (Singles, Pairs, and Quads) Bondable Beam-Lead
Devices
Applications
Microwave Integrated Circuits
Mixers
Detectors
Features
Low 1/f noise
Low intermodulation distortion
Statistical Process Control wafer fabrication
Skyworks
Green™ products are compliant with
all applicable legislation and are halogen-free.
For additional information, refer to
Skyworks
Definition of Green™,
document number
SQ04-0074.
Beam-lead Schottky barrier diodes are categorized by universal
mixer applications in six frequency ranges: S, C, X, Ku, K, and Ka
bands as noted in Table 1. They can also be used as modulators
and high-speed switches.
Beam-lead diodes are suited for balanced mixers, due to their low
parasitics and uniformity.
Description
Skyworks beam-lead silicon Schottky barrier mixer diodes are
designed for applications through 40
GHz.
The beam-lead design
reduces the problem of bonding to the very small area
characteristic of low capacitance junctions.
Beam-lead Schottky barrier mixer diodes are made by the
deposition of a suitable barrier metal on an epitaxial silicon
substrate to form the junction. The process and choice of
materials result in low series resistance with a narrow spread of
capacitance values for close impedance control.
A variety of forward voltages are available ranging from low values
for low, or starved, local oscillator drive levels to high values for high
drive, low distortion mixer applications. Capacitance ranges and
series resistances are comparable with the beam-lead devices that
are available up to, and including, the Ka-band. These diodes are
well suited for use in Microwave Integrated Circuits (MICs).
T
a
ble 1. Frequency Table
Frequency Band
S
C
X
Ku
K
Ka
Frequency
(GHz)
2 to 4
4 to 8
8.2 to 12.4
12.4 to 18.0
18.0 to 26.5
26.5 to 40.0
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200725D • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 8, 2014
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