0.5 Ω CMOS 1.65 V TO 3.6 V
Dual SPDT/2:1 MUX
ADG836
FEATURES
0.5 Ω typical on resistance
0.8 Ω maximum on resistance at 125°C
1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast-switching times <20 ns
Typical power consumption (<0.1 µW)
S1A
D1
S1B
IN1
IN2
S2A
D2
S2B
04308-001
ADG836
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
SWITCHES SHOWN FOR A LOGIC 1 INPUT
Figure 1.
GENERAL DESCRIPTION
The ADG836 is a low voltage CMOS device containing two
independently selectable single-pole, double-throw (SPDT)
switches. This device offers ultralow on resistance of less than
0.8 Ω over the full temperature range. The ADG836 is fully
specified for 3.3 V, 2.5 V, and 1.8 V supply operation.
Each switch conducts equally well in both directions when on,
and has an input signal range that extends to the supplies. The
ADG836 exhibits break-before-make switching action.
The ADG836 is available in a 10-lead MSOP and a 3 mm × 3 mm
12-lead LFCSP.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
5.
6.
<0.8 Ω over full temperature range of –40°C to +125°C.
Single 1.65 V to 3.6 V operation.
Compatible with 1.8 V CMOS logic.
High current handling capability (300 mA continuous
current at 3.3 V).
Low THD + N (0.02% typ).
3 mm × 3 mm LFCSP package and 10-lead MSOP package.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.
ADG836
TABLE OF CONTENTS
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 6
ESD Caution.................................................................................. 6
Pin Configurations ........................................................................... 7
Typical Performance Characteristics ..............................................8
Test Circuits..................................................................................... 11
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
4/05—Rev. 0 to Rev. A
Updated Format..................................................................Universal
Changes to Table 1............................................................................ 3
Changes to Table 2............................................................................ 4
Changes to Table 3............................................................................ 5
Changes to Ordering Guide .......................................................... 13
Revision 0: Initial Version
Rev. A | Page 2 of 16
ADG836
SPECIFICATIONS
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match
Between Channels (∆R
ON
)
On Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(OFF)
Channel On Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay
(t
BBM
)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
+25°C
Temperature
1
−40°C to +85°C −40°C to +125°C
0 V to V
DD
0.5
0.65
0.04
0.1
0.15
±0.2
±0.2
2
0.8
0.005
±0.1
4
21
26
4
7
17
40
−67
−90
−67
Total Harmonic Distortion (THD + N)
Insertion Loss
−3 dB Bandwidth
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
0.02
−0.05
57
25
75
0.003
1
1
2
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
0.75
0.075
0.8
0.08
0.16
V
DD
= 2.7 V, V
S
= 0 V to V
DD
, I
S
= 100 mA;
Figure 19
V
DD
= 2.7 V, V
S
= 0.65 V, I
S
= 100 mA
V
DD
= 2.7 V, V
S
= 0 V to V
DD
I
S
= 100 mA
V
DD
= 3.6 V
V
S
= 0.6 V/3.3 V, V
D
= 3.3 V/0.6 V;
Figure 20
V
S
= V
D
= 0.6 V or 3.3 V; Figure 21
V
IN
= V
INL
or V
INH
28
8
29
9
5
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V/0 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S1
= V
S2
= 1.5 V; Figure 23
V
S
= 1.5 V, R
S
= 0 Ω, C
L
= 1 nF; Figure 24
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
Figure 25
S1A−S2A/S1B−S2B, R
L
= 50 Ω,
C
L
= 5 pF, f = 100 kHz; Figure 28
S1A−S1B/S2A−S2B, R
L
= 50 Ω,
C
L
= 5 pF, f = 100 kHz; Figure 27
R
L
= 32 Ω, f = 20 Hz to 20 kHz,
V
S
= 2 V p-p
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
V
DD
= 3.6 V
Digital inputs = 0 V or 3.6 V
4
Temperature range for Y version is −40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. A | Page 3 of 16
ADG836
V
DD
= 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (∆R
ON
)
On Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(OFF)
Channel On Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
ON
Temperature
1
+25°C −40°C to +85°C −40°C to +125°C Unit
0 V to V
DD
0.65
0.72
0.04
0.16
0.23
±0.2
±0.2
1.7
0.7
0.005
±0.1
4
0.24
0.8
0.08
0.88
0.085
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
V
IN
= V
INL
or V
INH
Test Conditions/Comments
V
DD
= 2.3 V, V
S
= 0 V to V
DD,
I
S
= 100 mA;
Figure 19
V
DD
= 2.3 V, V
S
= 0.7 V, I
S
= 100 mA
V
DD
= 2.3 V, V
S
= 0 V to V
DD,
I
S
= 100 mA
V
DD
= 2.7 V
V
S
= 0.6 V/2.4 V, V
D
= 2.4 V/0.6 V; Figure 20
V
S
= V
D
= 0.6 V or 2.4 V; Figure 21
23
29
t
OFF
5
7
Break-before-Make Time Delay (t
BBM
) 17
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
30
−67
−90
−67
30
8
31
9
5
Total Harmonic Distortion (THD + N)
Insertion Loss
–3 dB Bandwidth
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
0.022
−0.06
57
25
75
0.003
1
4
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V/0 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S1
= V
S2
= 1.5 V; Figure 23
V
S
= 1.25 V, R
S
= 0 Ω, C
L
= 1 nF; Figure 24
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; Figure 25
S1A−S2A/S1B−S2B,
R
L
= 50
Ω,
C
L
= 5 pF, f = 100 kHz; Figure 28
dB typ
S1A−S1B/S2A−S2B,
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; Figure 27
%
R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 1.5 V p-p
dB typ
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
MHz typ R
L
= 50 Ω, C
L
= 5 pF; Figure 26
pF typ
pF typ
V
DD
= 2.7 V
µA typ
Digital inputs = 0 V or 2.7 V
µA max
1
2
Temperature range for Y version is −40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. A | Page 4 of 16
ADG836
V
DD
= 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
+25°C
Temperature
1
−40°C to +85°C −40°C to +125°C
0 V to V
DD
1
1.4
2
0.1
2.2
4
2.2
4
Unit
V
Ω typ
Ω max
Ω max
Ω typ
Test Conditions/Comments
On Resistance Match Between
Channels (∆R
ON
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(OFF)
Channel On Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
C
IN
, Digital Input Capacitance
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay (t
BBM
)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
V
DD
= 1.8 V, V
S
= 0 V to V
DD
, I
S
= 100 mA;
Figure 19
V
DD
= 1.65 V, V
S
= 0 V to V
DD
,
I
S
= 100 mA; Figure 19
V
DD
= 1.65 V, V
S
= 0.7 V, I
S
= 100 mA
V
DD
= 1.95 V
V
S
= 0.6 V/1.65 V, V
D
= 1.65 V/0.6 V;
Figure 20
V
S
= V
D
= 0.6 V or 1.65 V; Figure 21
±0.2
±0.2
0.65 V
DD
0.35 V
DD
0.005
±0.1
4
28
37
7
9
21
20
−67
−90
nA typ
nA typ
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
V
IN
= V
INL
or V
INH
38
10
39
11
5
−67
dB typ
Total Harmonic Distortion, THD
Insertion Loss
–3 dB Bandwidth
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
0.14
−0.08
57
25
75
0.003
1.0
4
%
dB typ
MHz
typ
pF typ
pF typ
µA typ
µA max
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V/0 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S
= 1.5 V; Figure 22
R
L
= 50 Ω, C
L
= 35 pF
V
S1
= V
S2
= 1 V; Figure 23
V
S
= 1 V, R
S
= 0 V, C
L
= 1 nF; Figure 24
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
Figure 25
S1A−S2A/S1B−S2B;
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
Figure 28
S1A−S1B/S2A−S2B;
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz;
Figure 27
R
L
= 32 Ω, f = 20 Hz to 20 kHz,
V
S
= 1.2 V p-p
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
R
L
= 50 Ω, C
L
= 5 pF; Figure 26
V
DD
= 1.95 V
Digital inputs = 0 V or 1.95 V
1
2
Temperature range for Y version is −40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. A | Page 5 of 16
Sensor
京公网安备 11010802033920号
EEWORLD
