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BLC8G27LS-100AVZ

Description
RF MOSFET Transistors Power LDMOS trans
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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RF MOSFET Transistors Power LDMOS trans

BLC8G27LS-100AVZ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
TechnologySi
PackagingTray
Moisture SensitiveYes
Factory Pack Quantity60
BLC8G27LS-100AV
Power LDMOS transistor
Rev. 5 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in the Doherty demo board.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
2520 to 2620
V
DS
(V)
28
P
L(AV)
(W)
18
G
p
(dB)
15.5
D
(%)
45
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for LTE base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range
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