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BSP92P L6327

Description
MOSFET P-Ch -250V 260mA SOT-223-3
Categorysemiconductor    Discrete semiconductor   
File Size445KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP92P L6327 Overview

MOSFET P-Ch -250V 260mA SOT-223-3

BSP92P L6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologyGaN
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 250 V
Id - Continuous Drain Current- 260 mA
Rds On - Drain-Source Resistance12 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Dual Drain
Pd - Power Dissipation1.8 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height1.6 mm
Length6.5 mm
ProductMOSFET Small Signal
Transistor Type1 P-Channel
Width3.5 mm
Fall Time6 ns
Rise Time6 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time67 ns
Typical Turn-On Delay Time5 ns
Unit Weight0.003951 oz
BSP92P
SIPMOS
Small-Signal-Transistor
Feature
P-Channel
Enhancement mode
Logic Level
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
Drain
pin 2/4
Gate
pin1
Source
pin 3
1
3
2
VPS05163
-250
12
-0.26
PG-SOT223
4
V
A
Qualified according to AEC Q101
Halogen­free according to IEC61249­2­21
Type
BSP92P
Package
PG-SOT223
Pb-free
Yes
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
BSP92P
Packaging
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
I
D
Value
-0.26
-0.23
Unit
A
Continuous drain current
T
A
=25°C
T
A
=70°C
Pulsed drain current
T
A
=25°C
I
D puls
-1.04
Reverse diode dv/dt
I
S
=-0.26A,
V
DS
=-200V, di/dt=-200A/µs,
T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
55/150/56
Class 1a
°C
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Rev 2.7
Page 1
2012-11-26

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Configuration Single Dual Drain SINGLE WITH BUILT-IN DIODE Single
Product Category MOSFET - MOSFET
Rise Time 6 ns - 6 ns
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